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부품번호 | PUMB16 기능 |
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기능 | PNP/PNP resistor-equipped transistors | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 9 페이지수
PEMB16; PUMB16
PNP/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 47 kΩ
Rev. 03 — 31 August 2009
Product data sheet
1. Product profile
1.1 General description
PNP/PNP resistor-equipped transistors
Table 1. Product overview
Type number
Package
NXP
PEMB16
SOT666
PUMB16
SOT363
JEITA
-
SC-88
NPN/PNP
complement
PEMD16
PUMD16
NPN/NPN
complement
PEMH16
PUMH16
1.2 Features
I Built-in bias resistors
I Simplifies circuit design
I Reduces component count
I Reduces pick and place cost
1.3 Applications
I Low current peripheral driver
I Control of IC inputs
I Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ
--
--
15.4 22
1.7 2.1
Max
−50
−100
28.6
2.6
Unit
V
mA
kΩ
NXP Semiconductors
PEMB16; PUMB16
PNP/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
ICBO
collector-base cut-off VCB = −50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = −30 V; IB = 0 A
VCE = −30 V; IB = 0 A;
Tj = 150 °C
VEB = −5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = −5 V; IC = −5 mA
IC = −10 mA; IB = −0.5 mA
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = −5 V; IC = −100 µA
VCE = −0.3 V; IC = −2 mA
R2/R1
bias resistor ratio
Cc collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
−100
nA
- - −1 µA
- - −50 µA
-
-
−120
µA
80 -
--
-
−150
mV
- −0.8 −0.5 V
−2 −1.1 -
V
15.4 22
28.6 kΩ
1.7 2.1 2.6
- - 3 pF
PEMB16_PUMB16_3
Product data sheet
Rev. 03 — 31 August 2009
© NXP B.V. 2009. All rights reserved.
4 of 9
4페이지 NXP Semiconductors
PEMB16; PUMB16
PNP/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
10. Revision history
Table 10. Revision history
Document ID
Release date
Data sheet status
Change notice Supersedes
PEMB16_PUMB16_3
Modifications:
20090831
Product data sheet
-
PEMB16_PUMB16_2
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
• Figure 5 “Package outline SOT363 (SC-88)”: updated
PEMB16_PUMB16_2
20050610
Product data sheet
-
PUMB16_1
PUMB16_1
20031103
Product specification -
-
PEMB16_PUMB16_3
Product data sheet
Rev. 03 — 31 August 2009
© NXP B.V. 2009. All rights reserved.
7 of 9
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |