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Número de pieza | ELM5964-7PS | |
Descripción | C-Band Internally Matched FET | |
Fabricantes | SUMITOMO | |
Logotipo | ||
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No Preview Available ! ELM5964-7PS
C-Band Internally Matched FET
FEATURES
High Output Power: P1dB=39.0dBm (Typ.)
High Gain: G1dB=11.0dB (Typ.)
High PAE: ηadd=36% (Typ.)
Broad Band: 5.9 to 6.4GHz
Internally matched
Plastic Package for SMT applications
DESCRIPTION
The ELM5964-7PS is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg.C)
Item
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
TSTG
TCH
15
-5
42.8
-40 to +125
175
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 deg.C)
Item
Symbol
Condition
Limit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
VDS
IGF
IGR
TCH
RG=100 ohm
RG=100 ohm
<10
<+16
>-2.2
155
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C)
Item
Drain Current
Trans conductance
Pinch-off Voltage
Gage-Source
Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power Added Efficiency
Gain Flatness
3rd Order Inter Modulation
Distortion
Rth
∆Tch
Symbol
Condition
IDSS
gm
VP
VGSO
P1dB
G1dB
Idsr
ηadd
∆G
IM3
Rth
∆Tch
VDS=5V, VGS=0V
VDS=5V, IDS=2200mA
VDS=5V, IDS=170mA
IGS=170uA
VDS=10V
IDS(DC)=2200mA(typ.)
f=5.9 to 6.4 GHz
f=6.4GHz
∆f=10MHz, 2-tone Test
Pout=28.0dBm (S.C.L)
Channel to Case
10V x Idsr x Rth
Min.
-
-
-0.5
-5.0
38.0
9.5
-
-
-
-40
-
-
Limit
Typ.
3400
3400
-1.5
-
39.0
11.0
2200
36
-
-45
2.5
-
Max.
5200
-
-3.0
-
-
-
2600
-
1.2
-
3.0
80
Unit
V
V
W
deg.C
deg.C
Unit
V
mA
mA
deg.C
Unit
mA
mS
V
V
dBm
dB
mA
%
dB
dBc
deg.C/W
deg.C
Edition 1.0
Nov. 2010
1
1 page ELM5964-7PS
C-Band Internally Matched FET
Input Power vs. Output Power, Power Added
Efficiency by Quiescent Drain Current
VDS=10V @5.9GHz
42 70
40 60
38 50
36 40
34 30
32 20
30 10
28 0
18 20 22 24 26 28 30 32
Input Power [dBm]
1400 mA
1800 mA
2200 mA
Input Power vs. Output Power, Power Added
Efficiency by Quiescent Drain Current
VDS=10V @6.15GHz
42 70
40 60
38 50
36 40
34 30
32 20
30 10
28 0
18 20 22 24 26 28 30 32
Input Power [dBm]
1400 mA
1800 mA
2200 mA
Input Power vs. Output Power, Power Added
Efficiency by Quiescent Drain Current
VDS=10V @6.4GHz
42 70
40 60
38 50
36 40
34 30
32 20
30 10
28 0
18 20 22 24 26 28 30 32
Input Power [dBm]
1400 mA
1800 mA
2200 mA
Edition 1.0
Nov. 2010
5
5 Page Package Out Line
4
5
6
7
ELM5964-7PS
C-Band Internally Matched FET
3
2
1
Co Planarity
Edition 1.0
Nov. 2010
Pin Assignments
1 : NC
2 : Gate
3 : NC
4 : NC
5 : Drain
6 : NC
7 : Source
11
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet ELM5964-7PS.PDF ] |
Número de pieza | Descripción | Fabricantes |
ELM5964-7PS | C-Band Internally Matched FET | SUMITOMO |
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