|
|
|
부품번호 | FLM5053-18F 기능 |
|
|
기능 | C-Band Internally Matched FET | ||
제조업체 | SUMITOMO | ||
로고 | |||
전체 5 페이지수
FEATURES
• High Output Power: P1dB = 43.0dBm (Typ.)
• High Gain: G1dB = 8.5dB (Typ.)
• High PAE: hadd = 35% (Typ.)
• Low IM3 = -46dBc@Po = 32.0dBm
• Broad Band: 5.0 to 5.3GHz
• Impedance Matched Zin/Zout = 50ohm
FLM5053-18F
C-Band Internally Matched FET
DESCRIPTION
The FLM5053-18F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
SEDI's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25deg.C
Storage Temperature
Tstg
Channel Temperature
Tch
SEDI recommends the follow ing conditions for the reliable operation of GaAs FETs:
15
-5
83.3
-65 to +175
175
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forw ard and reverse gate currents should not exceed 26.0 and -11.6 mA respectively w ith
gate resistance of 25ohm.
Unit
V
V
W
deg.C
deg.C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25deg.C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Unit
Saturated Drain Current
IDSS VDS=5V, VGS=0V
- 9.0 13.5 A
Transconductance
gm VDS=5V, IDS=4800mA
- 4000 -
mS
Pinch-off Voltage
Vp VDS=5V, IDS=480mA
-1.0 -2.0 -3.5
V
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
VGSO
P1dB
G1dB
Idsr
hadd
DG
IGS=-480uA
VDS=10V,
IDS=0.55 IDSS (Typ.),
f=5.0 to 5.3 GHz,
ZS=ZL=50ohm
-5.0 -
-
42.0 43.0 -
7.5 8.5
-
- 4800 6000
- 35 -
- - +/-0.6
V
dBm
dB
mA
%
dB
3rd Order Intermodulation
Distortion
f = 5.3 GHz, Df = 10 MHz
IM3 2-Tone Test
Pout = 32.0dBm S.C.L.
-44 -46
-
dBc
Thermal Resistance
Channel Temperature Rise
Rth
DTch
Channel to Case
- 1.6 1.8 deg.C/W
10V x Idsr x Rth
- - 80 deg.C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE
IK
ESD
Class 3A
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kohm)
4000V to 8000V
RoHS Compliance
Yes
Edition 1.3
Sep. 2012
1
FLM5053-18F
C-Band Internally Matched FET
Case Style "IK"
Metal-Ceramic Hermetic Package
Edition 1.3
Sep. 2012
1. Gate
2. Source (Flange)
3. Drain
Unit: mm(inches)
4
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ FLM5053-18F.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FLM5053-18F | C-Band Internally Matched FET | SUMITOMO |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |