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PDF FLM5359-8F Data sheet ( Hoja de datos )
| Número de pieza | FLM5359-8F | |
| Descripción | C-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
| Logotipo |  |
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FEATURES
• High Output Power: P1dB = 39.5dBm (Typ.)
• High Gain: G1dB = 9.5dB (Typ.)
• High PAE: hadd = 36% (Typ.)
• Low IM3 = -46dBc@Po = 28.5dBm
• Broad Band: 5.3 to 5.9GHz
• Impedance Matched Zin/Zout = 50ohm
FLM5359-8F
C-Band Internally Matched FET
DESCRIPTION
The FLM5359-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
SEDI's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25deg.C
Storage Temperature
Tstg
Channel Temperature
Tch
SEDI recommends the follow ing conditions for the reliable operation of GaAs FETs:
15
-5
42.8
-65 to +175
175
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forw ard and reverse gate currents should not exceed 32.0 and -4.4 mA respectively w ith
gate resistance of 100ohm.
Unit
V
V
W
deg.C
deg.C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25deg.C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Unit
Saturated Drain Current
IDSS VDS=5V, VGS=0V
- 3900 5850 mA
Transconductance
gm VDS=5V, IDS=2200mA
- 2000 -
mS
Pinch-off Voltage
Vp VDS=5V, IDS=180mA
-1.0 -2.0 -3.5
V
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
VGSO
P1dB
G1dB
Idsr
hadd
DG
IGS=-180uA
VDS=10V,
IDS=0.55 IDSS (Typ.),
f=5.3 to 5.9 GHz,
ZS=ZL=50ohm
-5.0
38.5
8.5
-
-
-
-
39.5
9.5
2200
36
-
-
-
-
2600
-
+/-0.6
V
dBm
dB
mA
%
dB
3rd Order Intermodulation
Distortion
f = 5.9 GHz, Df = 10 MHz
IM3 2-Tone Test
Pout = 28.5dBm S.C.L.
-44 -46
-
dBc
Thermal Resistance
Channel Temperature Rise
Rth
DTch
Channel to Case
- 3.0 3.5 deg.C/W
10V x Idsr x Rth
- - 80 deg.C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE
IB
ESD
Class 3A
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kohm)
4000V to 8000V
RoHS Compliance
Yes
Edition 1.4
Oct. 2012
1
1 page  
FLM5359-8F
C-Band Internally Matched FET
For further information please contact:
http://global-sei.com/Electro-optic/about/office.html
CAUTION
This product contains gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For
safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as
these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
・Observe government laws and company regulations when discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Edition 1.4
Oct. 2012
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet FLM5359-8F.PDF ] | |
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