FLM5359-45F Datasheet PDF - SUMITOMO
| Part Number | FLM5359-45F | |
| Description | C-Band Internally Matched FET | |
| Manufacturers | SUMITOMO | |
| Logo |  |
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FEATURES
• High Output Power: P1dB=46.5dBm(Typ.)
• High Gain: G1dB=8.5dB(Typ.)
• High PAE: hadd=36%(Typ.)
• Broad Band: 5.3 to 5.9GHz
• Impedance Matched Zin/Zout = 50ohm
• Hermetically Sealed Package
FLM5359-45F
C-Band Internally Matched FET
DESCRIPTION
The FLM5359-45F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C)
Item
Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
Tstg
Tch
Rating
15
-5
150
-65 to +175
175
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C)
Item
Symbol
Condition
DC Input Voltage
Forward Gate Current
Reverse Gate Current
VDS
IGF RG=13ohm
IGR RG=13ohm
Limit
<= 12
<= 107.2
>=-23.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Item
Symbol
Condition
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-Added Efficiency
Gain Flatness
Thermal Resistance
Channel Temperature Rise
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
hadd
DG
Rth
DTch
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
VDS=5V, IDS=960mA
IGS=-960uA
VDS=12V
IDS(DC)=8.0A (typ.)
f= 5.3 to 5.9 GHz
Zs=ZL=50 ohm
Channel to Case
12V x IDS(DC) x Rth
Limit
Min. Typ. Max.
Unit
- 16.0 -
A
- 8000 -
mS
-1.0 -2.0 -3.5
V
-5.0 -
-
V
46.0 46.5 -
dBm
7.5 8.5
-
dB
- 8.5 10.0 A
- 36 -
%
-
- 1.4
dB
- 0.8 1.0 deg.C/W
- - 100 deg.C
G.C.P.: Gain Compression Point
CASE STYLE
IK
ESD
Class 3A
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kohm)
4000V to 8000V
RoHS Compliance
Yes
Edition 1.3
Oct. 2012
1
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FLM5359-45F
C-Band Internally Matched FET
For further information please contact:
http://global-sei.com/Electro-optic/about/office.html
CAUTION
This product contains gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For
safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as
these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
・Observe government laws and company regulations when discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Edition 1.3
Oct. 2012
5
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Featured Datasheets
| Part Number | Description | MFRS |
| FLM5359-45F | The function is C-Band Internally Matched FET. ETC |  |
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