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PDF ELM5964-10F Data sheet ( Hoja de datos )
| Número de pieza | ELM5964-10F | |
| Descripción | C-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
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ELM5964-10F
C-Band Internally Matched FET
FEATURES
・High Output Power: P1dB=40.5dBm(Typ.)
・High Gain: G1dB=10.0dB(Typ.)
・High PAE: hadd=39%(Typ.)
・Broad Band: 5.9～6.4GHz
・Impedance Matched Zin/Zout = 50W
・Hermetically Sealed Package
DESCRIPTION
The ELM5964-10F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50W system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 oC)
Ite m
Symbol
Rating
Drain-Source Voltage
VDS
15
Gate-Source Voltage
V GS
-5
Total Pow er Dissipation
PT
42.8
Storage Tem perature
Tstg
-55 to +125
Channel Tem perature
Tch
175
Unit
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 oC)
Ite m
Sym bol
Condition
Lim it
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
VDS
IGF RG=50 ohm
IGR RG=50 ohm
≦10
≦27.0
≧-5.8
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 oC)
Ite m
Sym bol
Condition
Lim it
Min. Typ. Max.
Unit
Drain Current
IDSS VDS=5V , VGS=0V
- 4.0 5.6
A
Trans conductance
gm VDS=5V , IDS=2.4A
- 4.0 -
S
Pinch-off Voltage
Vp VDS=5V , IDS=240mA
-0.5 -1.5 -3.0
V
Gate-Source Breakdow n Voltage
VGSO IGS=-240uA
-5.0 -
-
V
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
3rd Order Interm odulation
Dis tor t ion
P1dB
G1dB
Idsr
Nadd
DG
IM3
VDS=10V
f= 5.9 ~ 6.4 GHz
IDSDC=2.6A (typ.)
Zs=ZL=50 ohm
f=6.4 GHz
Df=10MHz，2-tone Test
Pout=29dBm (S.C.L.)
39.5 40.5
9.0 10.0
- 2.6
- 39
--
-44 -46
-
-
3.0
-
1.2
-
dBm
dB
A
%
dB
dBc
Therm al Resistance
Rth Channel to Case
- 3.0 3.5
oC/W
Channel Tem perature Rise
DTch
10V x Idsr X Rth
- - 100
oC
CASE STYLE : IK
S.C.L. : Single Carrier Level G.C.P.: Gain Com pression Point
ESD Class IIIA 4000 ~ 8000V
Note : Based on JEDEC JESD22-A114 (C=100pF, R=1500 W)
Edition 1.4
July 2009
1
1 page  
ELM5964-10F
C-Band Internally Matched FET
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
Eudyna Devices Europe Ltd.
150 Edinburgh Avenue,
Slough, Berkshire, SL1 4SS,
United Kingdom
Phone: +44 (0) 1753-849950
FAX: +44 (0) 1753-577128
CAUTION
Eudyna Devices Compound Semiconductor Products contain gallium
arsenide (GaAs) which can be hazardous to the human body and the
environment.
For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products
are dangerous to the human body if inhaled, ingested, or swallowed.
・Observe government laws and company regulations when discarding
this product. This product must be discarded in accordance with
methods specified by applicable hazardous waste procedures.
Eudyna Devices Asia Pte. Ltd. Hong Kong Branch
Rm.1906B, 19/F, Tower 6, China Hong Kong City,
33 Canton Road,
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel: （852）2377-0227
Fax: （852）2377-3921
Eudyna Devices International s.r.l
Via Teglio 8/2-20158 Milano Italy
TEL:+39-02-37052921
Fax :+39-02-37052920
Eudyna Devices Inc.
Yokohama (HQ)
1,Kanai-cho,Sakae-ku,Yokohama,
Kanagawa, 244-0845,Japan
Tel +81-45-853-8156
Fax +81-45-853-8170
Eudyna Devices Inc.
Yamanashi Plant
1000 Kamisukiawara, Showa-cho, Nakakoma-gun,
Yamanashi, 409-3883, Japan
(Kokubo Industrial Park)
Tel +81-55-275-4411
Fax +81-55-275-9461
4
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