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Datasheet FLM5964-4F-001 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FLM5964-4F-001 | Internally Matched High Power GaAs FETs SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Product Information
FLM5964-4F/001
Part Number Class Outline / Package Code Frequency f (GHz) 2tone test lM3 Typ. (dBc) 2tone test @Pout S.C.L. (dBm) P1dB Typ. (dBm) G1db.Typ (dB) η add Typ.(%) VDS Typ.(V) IDS (DC) Typ. (mA) IDS (RF) Typ. (mA) Rth Typ.(°C |  SUMITOMO | data |
FLM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FLM0910-12F | X-Band Internally Matched FET FLM0910-12F
X-Band Internally Matched FET
FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that  ETC data | | |
| 2 | FLM0910-12F | X-Band Internally Matched FET FLM0910-12F
X-Band Internally Matched FET
FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that SUMITOMO data | | |
| 3 | FLM0910-15F | X-Band Internally Matched FET FLM0910-15F
X-Band Internally Matched FET
FEATURES •E High Output Power: P1dB=42.0dBm(Typ.) •E High Gain: G1dB=7.5dB(Typ.) •E High PAE: ηadd=32%(Typ.) •E Broad Band: 9.5~10.5GHz •E Impedance Matched Zin/Zout = 50Ω Hermetically Ε Sealed Package DESCRIPTION The FLM0910-15F is a power GaA SUMITOMO data | | |
| 4 | FLM0910-25F | X-Band Internally Matched FET FLM0910-25F
X-Band Internally Matched FET
FEATURES ・High Output Power: P1dB=44dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-25F is a power GaAs FET that SUMITOMO data | | |
| 5 | FLM0910-3F | X / Ku-Band Internally Matched FET FLM0910-3F
X, Ku-Band Internally Matched FET FEATURES
• • • • • • High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FLM0910-3F is SUMITOMO data | | |
| 6 | FLM0910-4F | X / Ku-Band Internally Matched FET FLM0910-4F
X, Ku-Band Internally Matched FET FEATURES
• • • • • • High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FLM0910-4F is SUMITOMO data | | |
| 7 | FLM0910-8F | X / Ku-Band Internally Matched FET FLM0910-8F
X, Ku-Band Internally Matched FET FEATURES
• • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω
DESCRIPTION
The FLM0910-8F is SUMITOMO data | |
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