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FLM5972-4F 데이터시트 PDF




SUMITOMO에서 제조한 전자 부품 FLM5972-4F은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 FLM5972-4F 자료 제공

부품번호 FLM5972-4F 기능
기능 C-Band Internally Matched FET
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FLM5972-4F 데이터시트, 핀배열, 회로
FLM5972-4F
FEATURES
• High Output Power: P1dB = 36.5dBm (Typ.)
• High Gain: G1dB = 9.5dB (Typ.)
• High PAE: ηadd = 36% (Typ.)
• Low IM3 = -45dBc@Po = 25.5dBm
• Broad Band: 5.9 ~ 7.2GHz
• Impedance Matched Zin/Zout = 50
• Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM5972-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudynas stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15 V
Gate-Source Voltage
VGS
-5 V
Total Power Dissipation
PT Tc = 25°C
25 W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175 °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 1700 2600
mA
Transconductance
gm VDS = 5V, IDS = 1100mA - 1700 -
mS
Pinch-off Voltage
Vp VDS = 5V, IDS = 85mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO IGS = -85µA
Output Power at 1dB G.C.P.
P1dB
-5.0 -
35.5 36.5
-
-
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
G1dB
Idsr
ηadd
VDS =10V,
IDS = 0.65IDSS (Typ.),
f = 5.9 ~ 7.2 GHz,
ZS=ZL=50 ohm
8.5 9.5 -
- 1100 1300
- 36 -
dB
mA
%
Gain Flatness
G
- - ±0.8
dB
3rd Order Intermodulation
Distortion
f = 7.2 GHz, f = 10 MHz
IM3 2-Tone Test
Pout = 25.5dBm S.C.L.
-42 -45
-
dBc
Thermal Resistance
Rth Channel to Case
- 5.0 6.0
°C/W
Channel Temperature Rise
Tch 10V x Idsr x Rth
- - 80
°C
CASE STYLE: IB
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level




FLM5972-4F pdf, 반도체, 판매, 대치품
FLM5972-4F
C-Band Internally Matched FET
Case Style "IB"
Metal-Ceramic Hermetic Package
2-R 1.6±0.15
(0.063)
1
2
0.1
(0.004)
3
0.6
(0.024)
10.7
(0.421)
2.6±0.15
(0.102)
5.2 Max.
(0.205)
12.0
(0.422)
17.0±0.15
(0.669)
21.0±0.15
(0.827)
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
1. Gate
2. Source (Flange)
3. Drain
Unit: mm(inches)
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.

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부품번호상세설명 및 기능제조사
FLM5972-4F

C-Band Internally Matched FET

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