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PDF FLM8596-8F Data sheet ( Hoja de datos )
| Número de pieza | FLM8596-8F | |
| Descripción | X / Ku-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
| Logotipo |  |
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FLM8596-8F
FEATURES
X, Ku-Band Internally Matched FET
• High Output Power: P1dB = 39.0dBm (Typ.)
• High Gain: G1dB = 7.5dB (Typ.)
• High PAE: ηadd = 29% (Typ.)
• Low IM3 = -45dBc@Po = 29.5dBm
• Broad Band: 8.5 ~ 9.6GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
DESCRIPTION
The FLM8596-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100Ω.
15
-5
42.8
-65 to +175
175
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 2200mA
-
-
Limit
Typ. Max.
3400 5200
3400 -
Unit
mA
mS
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
Vp
VGSO
P1dB
G1dB
Idsr
ηadd
∆G
3rd Order Intermodulation
Distortion
IM3
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IB
Rth
∆Tch
VDS = 5V, IDS = 170mA -0.5 -1.5 -3.0
IGS = -170µA
-5.0 -
-
V
V
38.5 39.0 -
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 8.5 ~ 9.6 GHz,
ZS=ZL= 50 ohm
6.5 7.5 -
- 2200 2600
- 29 -
- - ±0.6
f = 9.6 GHz, ∆f = 10 MHz
2-Tone Test
Pout = 28.5dBm S.C.L.
-42
-45
-
dBm
dB
mA
%
dB
dBc
Channel to Case
- 3.0 3.5
°C/W
10V x Idsr x Rth
- - 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1
August 2004
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLM8596-8F.PDF ] | |
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