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PDF FLM8596-15F Data sheet ( Hoja de datos )
| Número de pieza | FLM8596-15F | |
| Descripción | X-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
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FLM8596-15F
FEATURES
•High Output Power: P1dB=42.0dBm(Typ.)
•High Gain: G1dB=7.5dB(Typ.)
•High PAE: ηadd=32%(Typ.)
•Broad Band: 8.5 to 9.6GHz
•Impedance Matched Zin/Zout = 50ohm
•Hermetically Sealed Package
DESCRIPTION
The FLM8596-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50ohm system.
X-Band Internally Matched FET
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C)
Item
Drain-Source Voltage
Symbol
VDS
Rating
15
Gate-Source Voltage
VGS
-5
Total Power Dissipation
PT
57.7
Storage Temperature
Tstg -65 to +175
Channel Temperature
Tch
175
Recommended Operating Condition(Case Temperature Tc=25deg.C)
Item
Symbol
Condition
Limit
DC Input Voltage
VDS
≤10
Forward Gate Current
Reverse Gate Current
IGF RG=50ohm ≤16.7
IGR
RG=50ohm
≥-3.62
Unit
V
V
W
deg.C
deg.C
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Item
Drain Current
Trans conductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
Test Conditions
VDS=5V , VGS=0V
VDS=5V , IDS=3.5A
VDS=5V , IDS=300mA
IGS=-300µA
VDS=10V
f=8.5 to 9.6 GHz
IDS=0.5Idss
Zs=ZL=50ohm
Min.
-
-
-0.5
-5.0
41.0
6.5
-
Limit
Typ.
7.2
4500
-1.5
-
42.0
7.5
4.0
Max.
10.8
-
-3.0
-
-
-
5.0
Unit
A
mS
V
V
dBm
dB
A
Power-added Efficiency
Gain Flatness
ηadd
∆G
- 32 - %
- - 1.2 dB
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IB
Rth
∆Tch
Channel to Case
10V x Idsr x Rth
- 2.3 2.6 deg.C/W
- - 100 deg.C
G.C.P.:Gain Compression Point
ESD
Class 3A
4000V to 8000V
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kohm)
RoHS Compliance
Yes
Edition 1.3
Jul. 2012
1
1 page  
FLM8596-15F
X-Band Internally Matched FET
For further information please contact:
http://global-sei.com/Electro-optic/about/office.html
CAUTION
This product contains gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For
safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as
these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
・Observe government laws and company regulations when discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Edition 1.3
Jul. 2012
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet FLM8596-15F.PDF ] | |
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