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PDF ELM1414-30F-001 Data sheet ( Hoja de datos )
| Número de pieza | ELM1414-30F-001 | |
| Descripción | Ku-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
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ELM1414-30F/001
FEATURES
•High Output Power: P1dB=44.5dBm(Typ.)
•High Gain: G1dB=6.0dB(Typ.)
•High PAE: ηadd=22%(Typ.)
•Broad Band: 14.00 to14.5GHz
•Impedance Matched Zin/Zout = 50ohm
•Hermetically Sealed Package
Ku-Band Internally Matched FET
DESCRIPTION
The ELM1414-30F/001 is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS
Ite m
Symbol
Drain-Source Voltage (Tc=25deg.C
Gate-Source Voltage (Tc=25deg.C
VDS
V GS
Total Pow er Dissipation
Storage Tem perature
PT
Tstg
Channel Tem perature
Tch
Rating
15
-5
115.3
-55 to +125
175
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION
Ite m
Sym bol
DC Input Voltage
VDS
Forw ard Gate Current
Reverse Gate Current
IGF
IGR
Storage Tem perature
Channel Tem perature
Tstg
Tch
Condition
RG=24 ohm
RG=24 ohm
-55 to +125
Lim it
≤10
≤78.0
≥-16.9
≤+155
Unit
V
mA
mA
deg.C
deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Ite m
Sym bol
Condition
Lim it
Min. Typ. Max.
Unit
Drain Current
IDSS VDS=5V , VGS=0V
- 16.4 -
A
Trans conductance
gm VDS=5V , IDS=8A
- 11.6 -
S
Pinch-off Voltage
Vp VDS=5V , IDS=700mA
-0.5 -1.5 -3.0
V
Gate-Source Breakdow n Voltage
VGSO IGS=-700uA
-5.0 -
-
V
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
3rd Order Interm odulation
Dis tor tion
P1dB
G1dB
Idsr
Nadd
∆G
IM3
VDS=10V
f= 14.0 to 14.5 GHz
IDSDC=7.0A (typ.)
Zs=ZL=50 ohm
f=14.5 GHz
∆f=10MHz，2-tone Test
Pout=38.0dBm (S.C.L.)
44.0
5.5
-
-
-
-25
44.5
6.0
9.0
22
-
-30
-
-
10.4
-
1.2
-
dBm
dB
A
%
dB
dBc
Therm al Resistance
Rth Channel to Case
- 1.0 1.3 deg.C/W
Channel Tem perature Rise
∆Tch
(10V x Idsr + Pin - Pout ) X Rth
-
- 100
deg.C
CASE STYLE : M2A
S.C.L. : Single Carrier Level G.C.P.: Gain Com pression Point
ESD Class 3A 4000V to 8000V
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kohm)
RoHS COMPLIANCE
Yes
Edition 1.1
Jul. 2012
1
1 page  
ELM1414-30F/001
Ku-Band Internally Matched FET
For further information please contact:
http://global-sei.com/Electro-optic/about/office.html
CAUTION
This product contains gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For
safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as
these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
・Observe government laws and company regulations when discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Edition 1.1
Jul. 2012
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet ELM1414-30F-001.PDF ] | |
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