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EML9366 데이터시트 PDF




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부품번호 EML9366 기능
기능 Synchronous Step-Down Regulator
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EML9366 데이터시트, 핀배열, 회로
ESMT/EMP
EML9366
1.5MHz 600mA, Synchronous Step-Down
Regulator
General Description
EML9366 is designed with high efficiency step down DC/DC
converter for portable devices applications. It features with
extreme low quiescent current with no load which is the
best fit for extending battery life during the standby mode.
The device operates from 2.5V to 5.5V input voltage and up
to 600mA output current capability. High 1.5MHz internal
frequency makes small surface mount inductors and
capacitors possible and reduces overall PCB board space.
Further, build-in synchronous switch makes external
Schottky diode is no longer needed and efficiency is
improved. EML9366 is designed base on pulse width
modulation (PWM) for low output voltage ripple and fixed
frequency noise, low dropout mode provides 100% duty
cycle operation. Low reference voltage is designed for
achieving regulated output down to 0.6V.
The device is available in an adjustable version and fixed
output voltages of 1.2V, 1.5V, 1.8V and 3.3V. The EML9366 is
available in SOT package.
Features
„ Achieve 95% efficiency
„ Input Voltage : 2.5V to 5.5V
„ Output Current up to 600mA
„ Reference voltage 0.6V
„ Quiescent Current 200μA with No Load
„ Internal switching frequency 1.5MHz
„ No Schottky Diode needed
„ Low Dropout Operation: 100% Duty Cycle
„ Shutdown current < 1μA
„ Excellent Line and Load Transient Response
„ Over-temperature Protection
Applications
„ Blue-Tooth devices
„ Cellular and Smart Phones
„ Personal multi-media Player (PMP)
„ Wireless networking
„ Digital Still Cameras
„ Portable applications
Typical Application (adjustable)
Vin
3.3 – 5.5V
Cin
4.7 uF
CER
EN
4 VIN SW 3
1 EN VFB 5
2 GND
2.2 uH
22 pF
Vout 2.7V
Cout
10uF
CER
R2 (350KΩ)
R1 (100KΩ)
Fig. 1
Fig. 2
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Jan. 2011
Revision : 2.1
1/15




EML9366 pdf, 반도체, 판매, 대치품
ESMT/EMP
Absolute Maximum Ratings
Devices are subjected to failure if they stay above absolute maximum ratings.
Input Voltage ---------------------------------------- – 0.3V to 6V
EN, VFB Voltages ------------------------------------- – 0.3V to VIN
SW Voltage ------------------------------- – 0.3V to (VIN + 0.3V)
PMOS Switch Source Current (DC) ------------------ 800mA
NMOS Switch Sink Current (DC) ---------------------- 800mA
Peak Switch Sink and Source Current ------------------ 1.3A
EML9366
Operating Temperature Range ---------- –40°C to 85°C
Junction Temperature (Notes 1, 3) -------------------- 125°C
Storage Temperature Range ------------- – 65°C to 150°C
Lead Temperature (Soldering, 10 sec) ---------------- 240°C
ESD Susceptibility HBM ------------------------------------------ 2KV
MM ---------------------------------------- 200V
Electrical Characteristics
The denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25°C.
VIN = 3.6V unless otherwise specified.
Symbol Parameter
Conditions
IVFB Feedback Current
VFB Regulated Feedback Voltage
TA = 25°C
ΔVFB
VOUT %
Reference Voltage Line Regulation VIN = 2.5V to 5.5V
Output Voltage Accuracy
ΔVOVL Output Over-voltage Lockout
ΔVOUT Output Voltage Line Regulation
ΔVOVL = VOVL – VFB, EML9366
ΔVOVL = VOVL – VOUT, EML9366-Fixed
VIN = 2.5V to 5.5V
IPK Peak Inductor Current
VIN = 3V, VFB = 0.5V or VOUT = 90%,
Duty Cycle < 35%
VLOADREG Output Voltage Load Regulation
Quiescent Current (Note 2)
IS
Shutdown
VFB = 0.5V or VOUT = 90%
VEN = 0V, VIN = 4.2V
fOSC
RPFET
Oscillator Frequency
R DS(ON) of PMOS
VFB = 0.6V or VOUT = 100%
VFB = 0V or VOUT = 0V
ISW = 100mA
RNFET
ILSW
R DS(ON) of NMOS
SW Leakage
ISW = –100mA
VEN = 0V, VSW = 0V or 5V, VIN = 5V
Enable Threshold
VEN
Shutdown Threshold
IEN EN Leakage Current
Min Typ Max Units
±30 nA
0.588 0.600 0.612 V
0.4 %/V
-3
3%
20 50 80 mV
2.5 7.8 13
%
0.4 %/V
1.0 A
0.5 %
200 340 μA
0.1 1 μA
1.2 1.5 1.8 MHz
290
kHz
0.45 0.55
Ω
0.40 0.5
Ω
±1 μA
1.2
V
0.4 V
±1 μA
Note 1: TJ is a function of the ambient temperature TA and power dissipation PD ( TJ = TA + (PD)(250°C/W) )
Note 2: Dynamic quiescent current is higher due to the gate charge being delivered at the switching frequency.
Note 3: This IC is build-in over-temperature protection to avoid damage from overload conditions.
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Jan. 2011
Revision : 2.1
4/15

4페이지










EML9366 전자부품, 판매, 대치품
ESMT/EMP
Typical Performance Characteristics
Discontinuous Operation
EML9366
Start-up From Shutdown
SW
2V/DIV
VOUT
10mV/DIV
AC COUPLED
IL
200mA/DIV
VIN=3.6V
VOUT=1.8V
ILOAD=50mA
1μs/DIV
Load Step
EN
5V/DIV
VOUT
1V/DIV
IL
500mA/DIV
VIN=3.6V
40μs/DIV
VOUT=1.8V
ILOAD=600mA (3Ω RESISTOR)
Load Step
VOUT
100m/DIV
AC COUPLED
IL
500mA/DIV
ILOAD
500mA/DIV
VIN=3.6V
20μs/DIV
VOUT=1.8V
ILOAD=0mA to 600mA
Load Step
VOUT
100m/DIV
AC COUPLED
IL
500mA/DIV
ILOAD
500mA/DIV
VIN=3.6V
20μs/DIV
VOUT=1.8V
ILOAD=100mA to 600mA
VOUT
100m/DIV
AC COUPLED
IL
500mA/DIV
ILOAD
500mA/DIV
VIN=3.6V
20μs/DIV
VOUT=1.8V
ILOAD=50mA to 600mA
Load Step
VOUT
100m/DIV
AC COUPLED
IL
500mA/DIV
ILOAD
500mA/DIV
VIN=3.6V
20μs/DIV
VOUT=1.8V
ILOAD=200mA to 600mA
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Jan. 2011
Revision : 2.1
7/15

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관련 데이터시트

부품번호상세설명 및 기능제조사
EML9366

Synchronous Step-Down Regulator

Elite Semiconductor
Elite Semiconductor

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