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EML3170 데이터시트 PDF




Elite Semiconductor에서 제조한 전자 부품 EML3170은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 EML3170 기능
기능 Synchronous Step-Down Regulator
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EML3170 데이터시트, 핀배열, 회로
ESMT/EMP
Preliminary
EML3170
1.5MHz 3A, Synchronous Step-Down Regulator
General Description
EML3170 is a high efficiency current mode
synchronous buck PWM DC-DC regulator. The
internal generated 0.8V precision feedback
reference voltage is designed for low output voltage.
Low RDS (ON) synchronous switch dramatically reduces
conduction loss. To extend battery life for portable
application, 100% duty cycle is supported for
low-dropout operation. Shutdown mode also helps
saving the current consumption.
Features
Input Voltage Range: 2.5 to 5.5V
Adjustable Output Voltage From 0.8V to VIN
Precision Feedback Reference Voltage: 0.8V
(±2%)
Output Current: 3A (Max.)
Duty Cycle: 0~100%
Internal Fixed PWM Frequency: 1.5MHz
Low Quiescent Current: 100µA
No Schottky Diode Required
Built-in Soft Start
Current Mode Operation
Over Temperature Protection
Applications
Cellular Telephone
Wireless and DSL Modems
Digital Still Cameras
Portable Products
MP3 Players
Typical Application
R
V = V × (1 + 1 )
OUT
FB
R
2
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc. Publication Date: Feb. 2012
Revision: 0.1
1/14




EML3170 pdf, 반도체, 판매, 대치품
ESMT/EMP
Preliminary
EML3170
Absolute Maximum Ratings
Devices are subjected to fail if they stay above absolute maximum ratings.
Input Voltage (VIN, VCC) ----------------------- – 0.3V to 6V
EN, FB Voltages -------------------------------------- – 0.3V to VIN
SW Voltage ------------------------------- – 0.3V to (VIN + 0.3V)
SW Pin Switch Current (DC) -------------------------------- 3.9A
SW Pin Switch Current (AC) ---------------------------------- 6A
Lead Temperature (Soldering, 10 sec)---------------- 260°C
Thermal data
Package
Thermal resistance
Operating Temperature Range ---------- –40°C to 85°C
Junction Temperature (Note 1) ------------------------ 150°C
Storage Temperature Range ------------- – 65°C to 150°C
ESD Susceptibility HBM --------------------------------------- 2KV
MM ------------------------------------- 200V
Parameter
Value
E-SOP-8L
θJA (Note 2)
θJC (Note 3)
Junction-ambient
Junction-case
50oC/W
10oC/W
Electrical Characteristics
VIN=VVCC=VEN=3.6V, VOUT=1.2V, VFB=0.8V, L=2.2uH, CIN=10uF, COUT=22uF, TA = 25°C.
Symbol
Parameter
VIN Input Voltage Range
VFB Regulated Feedback Voltage
VOUT % Output voltage accuracy
ILSW SW Leakage
IQ Quiescent Current
IOCP Over Current Limit
fOSC Oscillator Frequency
RON(P) R DS(ON) of PMOS
RON(N) R DS(ON) of NMOS
VEN Enable Threshold
IEN EN Leakage Current
VFB Line Regulation with VREF
VOUT Output Voltage LineRegulation
Conditions
IOUT=10mA to 3.0A
VEN=0V, VIN=5V
Shutdown , VEN = 0V
Active, VFB=0.7V, VEN=VIN
PFM, VFB=0.9V, VEN=VIN
VFB=0.7V
VFB=0.8V, -40~+85
IOUT=100mA
IOUT=100mA
-40~+85
-40~+85
VIN=2.5V to 5.5V
VIN=2.5V to 5.5V
Min
2.5
0.784
-3
3.75
1.2
0.3
Typ
0.800
±0.01
0.1
100
80
5
1.5
60
60
1
±0.01
0.04
0.04
Max
5.5
0.816
+3
±1
1
6
1.8
90
90
1.5
±1
0.4
0.4
Units
V
V
%
µA
µA
µA
µA
A
MHz
m
m
V
µA
%/V
%/V
Note 1: TJ is a function of the ambient temperature TA and power dissipation PD (TJ = TA + (PD) *θJA )).
Note 2: θJA is measured in the natural convection at TA=25on a highly effective thermal conductivity test board
(2 layers , 2S0P ) according to the JEDEC 51-7 thermal measurement standard.
Note 3: θJC represents the heat resistance between the chip and the package top case.
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc. Publication Date: Feb. 2012
Revision: 0.1
4/14

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EML3170 전자부품, 판매, 대치품
ESMT/EMP
Preliminary
EML3170
Function Description
Control Loop
The EML3170 is a high efficiency current mode synchronous buck regulator. Both the main (P-channel MOSFET) and
synchronous (N-channel MOSFET) switches are built internally. With current mode operation, the PWM duty is
controlled both by the error amplifier output and the peak inductor current. At the beginning of each cycle, the
oscillator turn on the P-MOSFET switch to source current from VIN to SW output. Then, the chip starts to compare the
inductor current with the error amplifier output. Once the inductor current is larger than the error amplifier output,
the P-MOSFET switch is turned off. When the load current increases, the feedback voltage FB will drop slightly. This
causes the error amplifier to output a higher current level until the prior mentioned peak inductor current reach the
same level. The output voltage then can be sustained at the same.
When the top P-MOSFET switch is off, the bottom synchronous N-MOSFET switch is turned on. Once the inductor current
reverses, both top and bottom MOSFET will be turn off to leave the SW pin into high impedance state.
The EML3170’s current mode control loop also includes slope compensation to suppress sub-harmonic oscillations at
high duty cycles. This slope compensation is achieved by adding a compensation ramp to the inductor current
signal.
LDO Mode
The EML3170’s maximum duty cycle can reach 100%. That means the driver’s main switch is turn on through out
whole clock cycle. Once the duty reaches 100%, the feedback path no longer controls the output voltage. The
output voltage will be the input voltage minus the main switch voltage drop.
Over Current Protection
EML3170 limits the peak main switch current cycle by cycle. When over current occurs, chip will turn off the main
switch and turn the synchronous switch on until next cycle.
Short Circuit Protection
When the FB pin is drop below 300mV, the chip will tri-state the output pin SW automatically. After 300us rest to avoid
over heating, chip will re-initiate PWM operation with soft start.
Thermal Protection
EML3170 will shutdown automatically when the internal junction temperature reaches 150to protect both the part
and the system.
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc. Publication Date: Feb. 2012
Revision: 0.1
7/14

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