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EML3406 데이터시트 PDF




Elite Semiconductor에서 제조한 전자 부품 EML3406은 전자 산업 및 응용 분야에서
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PDF 형식의 EML3406 자료 제공

부품번호 EML3406 기능
기능 Synchronous Step-Down Regulator
제조업체 Elite Semiconductor
로고 Elite Semiconductor 로고


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EML3406 데이터시트, 핀배열, 회로
Elite MicroPower Inc.
EML3406
1.5MHz 600mA, Synchronous Step-Down
Regulator
General Description
EML3406 is designed with high efficiency step down
DC/DC converter for portable devices applications. It
features with extreme low quiescent current with no
load which is the best fit for extending battery life during
the standby mode. The device operates from 2.5V to
5.5V input voltage and up to 600mA output current
capability. High 1.5MHz internal frequency makes small
surface mount inductors and capacitors possible and
reduces overall PCB board space. Further, build-in
synchronous switch makes external Schottky diode is no
longer needed and efficiency is improved. EML3406 is
designed base on pulse width modulation (PWM) for
low output voltage ripple and fixed frequency noise,
low dropout mode provides 100% duty cycle operation.
Low reference voltage is designed for achieving
regulated output down to 0.6V.
The device is available in an adjustable version and
fixed output voltages of 1.2V, 1.5V, 1.8V and 3.3V. The
EML3406 is available in SOT-5 package.
Features
Achieve 95% efficiency
Input Voltage : 2.5V to 5.5V
Output Current up to 600mA
Reference voltage 0.6V
Quiescent Current 200μA with No Load
Internal switching frequency 1.5MHz
No Schottky Diode needed
Low Dropout Operation: 100% Duty Cycle
Shutdown current < 1μA
Excellent Line and Load Transient Response
Over-temperature Protection
Applications
Blue-Tooth devices
Cellular and Smart Phones
Personal multi-media Player (PMP)
Wireless networking
Digital Still Cameras
Portable applications
Typical Application (adjustable)
Vin
3.3 – 5.5V
Cin
4.7 uF
CER
EN
4 VIN SW 3
1 EN VFB 5
2 GND
2.2 uH
22 pF
Vout 2.7V
Cout
10uF
CER
R2 (350K)
R1 (100K)
Fig. 1
Fig. 2
Elite MicroPower Inc. reserves the right to make changes to improve reliability or manufacturability without notice,
and customers are advised to obtain the latest version of relevant information prior to placing orders.
DSL3406_V7.3 July 11 th 2008
Page 1 of 14
www.elitemicropower.com




EML3406 pdf, 반도체, 판매, 대치품
Elite MicroPower Inc.
EML3406
Absolute Maximum Ratings
Devices are subjected to failure if they stay above absolute maximum ratings.
Input Voltage ---------------------------------------- – 0.3V to 6V
EN, VFB Voltages ------------------------------------- – 0.3V to VIN
SW Voltage ------------------------------- – 0.3V to (VIN + 0.3V)
PMOS Switch Source Current (DC) ----------------- 800mA
NMOS Switch Sink Current (DC) ---------------------- 800mA
Peak Switch Sink and Source Current ----------------- 1.3A
Operating Temperature Range ---------- –40°C to 85°C
Junction Temperature (Notes 1, 3) -------------------- 125°C
Storage Temperature Range -------------- – 65°C to 150°C
Lead Temperature (Soldering, 10 sec) ---------------- 240°C
ESD Susceptibility HBM ------------------------------------------ 2KV
MM ---------------------------------------- 200V
Electrical Characteristics
The denotes specifications which apply over the full operating temperature range, otherwise specifications are TA
= 25°C. VIN = 3.6V unless otherwise specified.
Symbol Parameter
Conditions
IVFB Feedback Current
VFB Regulated Feedback Voltage
TA = 25°C
ΔVFB Reference Voltage Line Regulation VIN = 2.5V to 5.5V
VOUT % Output Voltage Accuracy
ΔVOVL Output Over-voltage Lockout
ΔVOUT Output Voltage Line Regulation
ΔVOVL = VOVL – VFB, EML3406
ΔVOVL = VOVL – VOUT, EML3406-Fixed
VIN = 2.5V to 5.5V
IPK Peak Inductor Current
VIN = 3V, VFB = 0.5V or VOUT = 90%,
Duty Cycle < 35%
VLOADREG Output Voltage Load Regulation
Quiescent Current (Note 2)
IS
Shutdown
VFB = 0.5V or VOUT = 90%
VEN = 0V, VIN = 4.2V
fOSC
Oscillator Frequency
VFB = 0.6V or VOUT = 100%
VFB = 0V or VOUT = 0V
RPFET
R DS(ON) of PMOS
ISW = 100mA
RNFET
R DS(ON) of NMOS
ISW = –100mA
ILSW SW Leakage
VEN = 0V, VSW = 0V or 5V, VIN = 5V
Enable Threshold
VEN
Shutdown Threshold
IEN EN Leakage Current
Min Typ Max Units
±30 nA
0.588 0.600 0.612 V
0.4 %/V
-3
3%
20 50 80 mV
2.5 7.8 13
%
0.4 %/V
1.0 A
0.5 %
200 340 μA
0.1 1 μA
1.2 1.5 1.8 MHz
290
kHz
0.45 0.55
Ω
0.40 0.5
Ω
±1 μA
1.2 V
0.4
V
±1 μA
Note 1: TJ is a function of the ambient temperature TA and power dissipation PD ( TJ = TA + (PD)(250°C/W) )
Note 2: Dynamic quiescent current is higher due to the gate charge being delivered at the switching frequency.
Note 3: This IC is build-in over-temperature protection to avoid damage from overload conditions.
Elite MicroPower Inc. reserves the right to make changes to improve reliability or manufacturability without notice,
and customers are advised to obtain the latest version of relevant information prior to placing orders.
DSL3406_V7.3 July 11 th 2008
Page 4 of 14
www.elitemicropower.com

4페이지










EML3406 전자부품, 판매, 대치품
Elite MicroPower Inc.
Typical Performance Characteristics
EML3406
Discontinuous Operation
SW
2V/DIV
VOUT
10mV/DIV
AC COUPLED
IL
200mA/DIV
VIN=3.6V
VOUT=1.8V
ILOAD=50mA
1μs/DIV
Load Step
VOUT
100m/DIV
AC COUPLED
IL
500mA/DIV
ILOAD
500mA/DIV
VIN=3.6V
20μs/DIV
VOUT=1.8V
ILOAD=0mA to 600mA
Load Step
VOUT
100m/DIV
AC COUPLED
IL
500mA/DIV
ILOAD
500mA/DIV
VIN=3.6V
20μs/DIV
VOUT=1.8V
ILOAD=100mA to 600mA
Start-up From Shutdown
EN
5V/DIV
VOUT
1V/DIV
IL
500mA/DIV
VIN=3.6V
40μs/DIV
VOUT=1.8V
ILOAD=600mA (3Ω RESISTOR)
Load Step
VOUT
100m/DIV
AC COUPLED
IL
500mA/DIV
ILOAD
500mA/DIV
VIN=3.6V
20μs/DIV
VOUT=1.8V
ILOAD=50mA to 600mA
Load Step
VOUT
100m/DIV
AC COUPLED
IL
500mA/DIV
ILOAD
500mA/DIV
VIN=3.6V
20μs/DIV
VOUT=1.8V
ILOAD=200mA to 600mA
Elite MicroPower Inc. reserves the right to make changes to improve reliability or manufacturability without notice,
and customers are advised to obtain the latest version of relevant information prior to placing orders.
DSL3406_V7.3 July 11 th 2008
Page 7 of 14
www.elitemicropower.com

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