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PDF EML3175 Data sheet ( Hoja de datos )
| Número de pieza | EML3175 | |
| Descripción | Synchronous Step-Down DC-DC Converter | |
| Fabricantes | Elite Semiconductor | |
| Logotipo |  |
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ESMT
EML3175
3.0A, Synchronous Step-Down DC-DC Converter
General Description
EML3175 is a high efficiency, DC-DC synchronous
buck converter which provides 3.0A output loading
after output voltage reach preset voltage. EML3175
uses different modulation algorithms for various
loading conditions. Under heavy load, EML3175
regulates the output voltage using Pulse Width
Modulation (PWM). The PWM mode provides low
output voltage ripple and fixed frequency noise.
While in light load, it enters Power Skip Modulation
(PSM) automatically to ensure a highly efficient
operation at light load condition. Under very heavy
load condition or when the input voltage
approaches the output voltage, EML3175 enters low
dropout voltage operation under 100% duty cycle.
The internal generated 0.8V precision feedback
reference voltage is designed for low output voltage
request. Low Power-FET Ron synchronous switch
dramatically reduces conduction loss.
The EML3175 is available in an 8-pin, space-saving
TDFN-3x3 package.
Typical Application
Features
Wide Operating Voltage Ranges : 2.6V to 5.5V
3.0A Output Current
High efficiency Buck Power Converter
Auto-select PSM/PWM
LDO mode: duty cycle: 100%
Synchronous Power Switches Rectification, no
Schottky Diode Required
1.4MHz Switching Frequency
Internal Soft-Start
Current Limit Protection
Over Temperature Protection
Output Shorting Protect
Output Over Voltage Protection
Applications
Cellular telephone
Wireless and DSL Modems
Digital Still Cameras
Portable Products
MP3 Players
R
V = V × (1 + 1 )
OUT
FB
R
2
Fig. 1 EML3175 application circuit
Elite Semiconductor Memory Technology Inc.
Publication Date: Dec. 2013
Revision: 0.1
1/16
1 page  
ESMT
EML3175
Typical Performance Characteristics
VIN=5.0V, TA=25℃, L=2.2uH, CIN=22uF*2, COUT=22uF*2, unless otherwise specified
Efficiency vs. Load (Fig. 3)
Efficiency vs. Load (Fig. 4)
100
90
80
70
60
50
40
30
20
10
0
1
VI=5.0V
VI=3.6V
VI=4.2V
VO=3.3V
10 100 1000
Output Current (mA)
10000
Load Regulation (Fig. 5)
100
90
80
70
60
50
40
30
20
10
0
1
VI=3.6V
VI=4.2V
VI=5.0V
V0=1.2V
10 100 1000
Output Current (mA)
10000
Load Regulation (Fig. 6)
3.36
3.34
3.32
3.30
3.28
3.26
3.24
1
VI=5.5V
VI=5.0V
VO=3.3V
10 100 1000
Output Current (mA)
10000
1.24
1.22
1.20
1.18
1.16
1.14
1
VI=5.5V
VI=5.0V
VO=1.2V
10 100 1000
Output Current (mA)
10000
Quiescent Current vs. Input Voltage (Fig. 7) Quiescent Current vs. Temperature (Fig. 8)
300 300
250
Quiescent Current
200
250 Quiescent Current
200
150 150
100 100
50
T=25℃
50
VI=5.0V
VFB=0.9V
VFB=0.9V
00
2.5 3.0 3.5 4.0 4.5 5.0 5.5
-40 -15 10 35 60 85
Input Voltage (V)
Temperature (℃)
Elite Semiconductor Memory Technology Inc.
Publication Date: Dec. 2013
Revision: 0.1
5/16
5 Page 
ESMT
EML3175
Output Voltage Setting
The output voltage of EML3175 can be adjusted by a resistive divider according to the following formula:
VOUT
= VREF
* ⎜⎜⎝⎛1 +
R1
R2
⎟⎟⎠⎞ = 0.8 * ⎜⎜⎝⎛1 +
R1
R2
⎟⎟⎠⎞
The resistive divider senses the fraction of the output voltage as shown in Fig.21 Using large feedback resistor
can increase efficiency, but too large value affects the device’s output accuracy because of leakage current
going into device’s FB pin. The recommended value for R2 is therefore in the range of 50KΩ.
Fig. 21 Setting the Output Voltage
Under Voltage Lock Out
The under-voltage lockout (UVLO) circuitry ensures that the EMl3175 starts up with adequate voltage. The
regulator output is disabled whenever VIN is below UVLO. The hysteresis of UVLO is designed to be 100 mV.
Elite Semiconductor Memory Technology Inc.
Publication Date: Dec. 2013
Revision: 0.1
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet EML3175.PDF ] | |
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