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부품번호 | EUA2313 기능 |
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기능 | 6-W Stereo Class-D Audio Power Amplifier | ||
제조업체 | Eutech Microelectronics | ||
로고 | |||
EUA2313
6-W Stereo Class-D Audio Power
Amplifier with Speaker Protection
DESCRIPTION
The EUA2313 is a high efficiency, 2 channel bridged-tied
load (BTL), class-D audio power amplifier. Operating from
a 10V power supply, EUA2313 is capable of delivering
6W/ channel of continuous output power to a 8Ω load with
10% THD+N. The EUA2313 features a differential input
architecture offering improved noise immunity over a
single-ended (SE) input amplifier. Amplifier gain is
internally configured and can be selected to 20, 26, 32 or
36dB utilizing the G0 and G1 gain select pins. Advanced
EMI suppression technology enables the use of
inexpensive ferrite bead at the outputs while meeting EMC
requirements.
The speaker protection circuitry is integrated into
EUA2313 to limit the amount of current through the
speaker. Meanwhile, the AGC detects output signal clip
due to the over level input signal and suppresses it
automatically. The EUA2313 also features short-circuit and
thermal protection preventing the device from being
damaged during a fault condition. The EUA2313 is
available in thermally efficient 28-pin TSSOP package.
FEATURES
Wide Supply Voltage: 8V to 26V
Unique Modulation Scheme Reduces EMI Emission
6-W/ch into an 8-Ω Load From a 10-V Supply
12W into a 4-Ω Mono Load From a 10-V Supply
87% Efficient Class-D Operation Eliminates
Need for Heat Sinks
Four Selectable, Gain Settings
Differential Inputs
Speaker Protection Circuitry
Auto Gain Control
Thermal and Short-Circuit Protection
28-pin TSSOP Package with Thermal Pad
RoHS compliant and 100% lead(Pb)-free
Halogen-Free
APPLICATIONS
Televisions
Typical Application Circuit
DS2313 Ver1.1 May 2012
Figure1. Simplified Application Schematic
1
Tel: 0755-8398 3377 / 135 9011 2223 http://www.gofotech.com
EUA2313
Absolute Maximum Ratings
▓ Supply Voltage, AVCC,PVCC, ------------------------------------------------------------------------- -0.3 V to 30V
▓ Input Voltage, SD ,GAIN0,GAIN1,PBTL, FAULT ----------------------------------------- -0.3 V to VCC +0.3V
▓ Input Voltage, PLIMIT ---------------------------------------------------------------------- -0.3 V to GVDD +0.3V
▓ Input Voltage, RINN,RINP,LINN,LINP ------------------------------------------------------------- -0.3 V to 6.3V
▓Thermal Resistance θJA (TSSOP-28) --------------------------------------------------------------------
34°C /W
▓ Free-air Temperature Range, TA --------------------------------------------------------------------- -40°C to +85°C
▓ Junction Temperature Range, TJ -------------------------------------------------------------------- -40°C to +150°C
▓ Storage Temperature Rang, Tstg ------------------------------------------------------------------- -65°C to +150°C
▓Lead Temperature ------------------------------------------------------------------------------------------
260°C
▓ Load Resistance, RLOAD ---------------------------------------------------------------------------------- 3.2Ω Minimum
▓ ESD Susceptibility (HBM) ------------------------------------------------------------------------------------- 2kV
Recommended Operating Conditions
Supply voltage, VCC
PVCC,AVCC
High-level input voltage, VIH SD ,GAIN0,GAIN1,PBTL
Low-level input voltage, VIL SD ,GAIN0,GAIN1,PBTL
High-level input current, IIH
SD ,GAIN0,GAIN1,PBTL,VI=2V,VCC=18V
Low-level input current, IIL
SD ,GAIN0,GAIN1,PBTL,VI=0.8V,VCC=18V
Low-level output voltage, VOL FAULT , RPULL-UP=100k, VCC=26V
Oscillator frequency, fOSC
Operating free-air temperature, TA
Min.
8
2
230
-40
Max.
26
0.8
50
5
0.8
330
85
Unit
V
V
V
µA
µA
V
kHz
°C
DC Characteristics TA = +25°C ,VCC=24V, RL=8Ω (Unless otherwise noted)
Symbol
Parameter
Class-D output offset voltage
VOS (measured differentially)
Conditions
VI= 0V, Gain = 36dB
EUA2313
Min. Typ. Max.
5 50
ICC Quiescent supply current
SD =2V, no load, PVCC=24V
65
ICC(SD)
Quiescent supply current in shutdown
mode
SD =0.8V, no load, PVCC=24V
250 1000
rDS(on) Drain-source on-state resistance
VCC=12V,
High Side
IO=500mA, TJ=25°C Low Side
400
400
G Gain
GAIN1=0.8V
GAIN1=2V
GAIN0=0.8V 19 20 21
GAIN0=2V 25 26 27
GAIN0=0.8V 31 32 33
GAIN0=2V 35 36 37
tON Turn-on time
SD =2V
28
tOFF Turn-off time
SD =0.8V
28
GVDD Gate Drive Supply
IGVDD=100µA
4.2 4.5 4.8
tDCDET DC Detect time
V(RINN)=5V, VRINP=0V
420
Unit
mV
mA
µA
mΩ
dB
dB
ms
ms
V
ms
DS2313 Ver1.1 May 2012
4
4페이지 Typical Characteristics
Tel: 0755-8398 3377 / 135 9011 2223 http://www.gofotech.com
EUA2313
Figure3.
Figure4.
Figure5.
Figure6.
Figure7.
DS2313 Ver1.1 May 2012
7
Figure8.
7페이지 | |||
구 성 | 총 18 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |