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EMH7600 데이터시트 PDF




Elite Semiconductor에서 제조한 전자 부품 EMH7600은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 EMH7600 자료 제공

부품번호 EMH7600 기능
기능 High Efficiency Synchronous DC/DC Boost Converter
제조업체 Elite Semiconductor
로고 Elite Semiconductor 로고


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EMH7600 데이터시트, 핀배열, 회로
ESMT/EMP
EMH7600
Battery Powered, High Efficiency Synchronous
DC/DC Boost Converter
General Description
EMH7600 is designed with high efficiency step up
DC/DC converter for portable devices applications.
It features with extreme low 26μA quiescent current
with no load which is the best fit for extending
battery life during the standby mode.
The start-up voltage is 0.93V typically with operating
voltage down to 0.7V. With Synchronous structure, it
does not need any external Schottky diode. The
peak current is limited to 1A for quick turn on. The
EMH7600 is available in MSOP-8 package.
This product can provide 500mA load current and
still maintained at least 70% efficiency and above
90% efficiency when at 100mA load current.
The EMH7600 is available in MSOP-8 package, With
RoHS compliance.
Features
„ Single or dual battery operation
„ Achieve 93% efficiency
„ Output Current up to 500mA
„ Reference voltage 1.195V
„ Typical Iq 26μA with no load
„ No Schottky diode needed
„ Shutdown current < 1μA
„ Excellent Line and Load Transient Response
„ On-Chip Low Battery Detector ( MSOP-8
package)
Applications
„ Blue-Tooth devices
„ Cellular and Smart Phones
„ Personal multi-media Player (PMP)
„ Wireless networking
„ Hand-Held Devices with 1 to 3-Cell of
NiMH/NiCd Batteries
„ Digital Still Cameras
„ Portable applications
Typical Application
100.0%
90.0%
80.0%
70.0%
60.0%
50.0%
40.0%
30.0%
20.0%
10.0%
0.0%
0.01
Efficiency vs. Load Current
0.1 1 10 100 1000
Output Current (mA)
Fig. 1
Fig. 2
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Jun. 2009
Revision : 2.0
1/17




EMH7600 pdf, 반도체, 판매, 대치품
ESMT/EMP
EMH7600
LBOB Off Leakage Current
VLBOB=5.5V,VLBI=5.5V
0.07
1 nA
LBI Hystereisis
SD Input Voltage
(*when SD=”L” , Vout=Vin)
VIL
VIH
50 mV
0.8Vout
0.2Vin
V
Note 1: Specifications are tested at TA=25°C. Specifications over temperature range are guarantee by
design, characterization and correlation with Statistical Quality Controls (SQC).
Note 2: Start-up voltage operation is guaranteed without external Schottky diode
Note 3: Steady-state output current indicates that the device maintains regulation under load.
Note 4: Device is bootstrapped (power to the IC comes from OUT). This correlates directly with the actual battery
supply.
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Jun. 2009
Revision : 2.0
4/17

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EMH7600 전자부품, 판매, 대치품
ESMT/EMP
Typical Performance Characteristics
Vin=2.4V, Vout=3.3V unless otherwise specified
EMH7600
Switch Ron vs Temperature
Ripple Voltage vs Output Current when Vin=1.2V
Switch Resistance vs. Temperature when Vout=3.3V ILX=100mA
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Temperature (℃)
NMOS
PMOS
Line Transient Response
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0
Ripple Voltage
50 100 150
Output Current (mA)
200
Shutdown current vs input voltage
Shutdown Current vs. Supply Voltage
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Supply Voltage (V)
Efficiency vs Load current at Vin=1.2V
100.0%
90.0%
80.0%
70.0%
60.0%
50.0%
40.0%
30.0%
20.0%
10.0%
0.0%
0.01
Efficiency vs. Load Current
0.1 1 10 100 1000
Output Current (mA)
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Jun. 2009
Revision : 2.0
7/17

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