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부품번호 | EMH7600 기능 |
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기능 | High Efficiency Synchronous DC/DC Boost Converter | ||
제조업체 | Elite Semiconductor | ||
로고 | |||
ESMT/EMP
EMH7600
Battery Powered, High Efficiency Synchronous
DC/DC Boost Converter
General Description
EMH7600 is designed with high efficiency step up
DC/DC converter for portable devices applications.
It features with extreme low 26μA quiescent current
with no load which is the best fit for extending
battery life during the standby mode.
The start-up voltage is 0.93V typically with operating
voltage down to 0.7V. With Synchronous structure, it
does not need any external Schottky diode. The
peak current is limited to 1A for quick turn on. The
EMH7600 is available in MSOP-8 package.
This product can provide 500mA load current and
still maintained at least 70% efficiency and above
90% efficiency when at 100mA load current.
The EMH7600 is available in MSOP-8 package, With
RoHS compliance.
Features
Single or dual battery operation
Achieve 93% efficiency
Output Current up to 500mA
Reference voltage 1.195V
Typical Iq 26μA with no load
No Schottky diode needed
Shutdown current < 1μA
Excellent Line and Load Transient Response
On-Chip Low Battery Detector ( MSOP-8
package)
Applications
Blue-Tooth devices
Cellular and Smart Phones
Personal multi-media Player (PMP)
Wireless networking
Hand-Held Devices with 1 to 3-Cell of
NiMH/NiCd Batteries
Digital Still Cameras
Portable applications
Typical Application
100.0%
90.0%
80.0%
70.0%
60.0%
50.0%
40.0%
30.0%
20.0%
10.0%
0.0%
0.01
Efficiency vs. Load Current
0.1 1 10 100 1000
Output Current (mA)
Fig. 1
Fig. 2
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Jun. 2009
Revision : 2.0
1/17
ESMT/EMP
EMH7600
LBOB Off Leakage Current
VLBOB=5.5V,VLBI=5.5V
0.07
1 nA
LBI Hystereisis
SD Input Voltage
(*when SD=”L” , Vout=Vin)
VIL
VIH
50 mV
0.8Vout
0.2Vin
V
Note 1: Specifications are tested at TA=25°C. Specifications over temperature range are guarantee by
design, characterization and correlation with Statistical Quality Controls (SQC).
Note 2: Start-up voltage operation is guaranteed without external Schottky diode
Note 3: Steady-state output current indicates that the device maintains regulation under load.
Note 4: Device is bootstrapped (power to the IC comes from OUT). This correlates directly with the actual battery
supply.
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Jun. 2009
Revision : 2.0
4/17
4페이지 ESMT/EMP
Typical Performance Characteristics
Vin=2.4V, Vout=3.3V unless otherwise specified
EMH7600
Switch Ron vs Temperature
Ripple Voltage vs Output Current when Vin=1.2V
Switch Resistance vs. Temperature when Vout=3.3V ILX=100mA
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Temperature (℃)
NMOS
PMOS
Line Transient Response
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0
Ripple Voltage
50 100 150
Output Current (mA)
200
Shutdown current vs input voltage
Shutdown Current vs. Supply Voltage
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Supply Voltage (V)
Efficiency vs Load current at Vin=1.2V
100.0%
90.0%
80.0%
70.0%
60.0%
50.0%
40.0%
30.0%
20.0%
10.0%
0.0%
0.01
Efficiency vs. Load Current
0.1 1 10 100 1000
Output Current (mA)
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Jun. 2009
Revision : 2.0
7/17
7페이지 | |||
구 성 | 총 17 페이지수 | ||
다운로드 | [ EMH7600.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
EMH7600 | High Efficiency Synchronous DC/DC Boost Converter | Elite Semiconductor |
EMH7600-00MA08GRR | High Efficiency Synchronous DC/DC Boost Converter | Elite Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |