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EMH7021-00FF10NRR 데이터시트 PDF




Elite Semiconductor에서 제조한 전자 부품 EMH7021-00FF10NRR은 전자 산업 및 응용 분야에서
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부품번호 EMH7021-00FF10NRR 기능
기능 500KHz PWM Synchronous Boost Converter
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EMH7021-00FF10NRR 데이터시트, 핀배열, 회로
ESMT/EMP
EMH7021
1A, 500KHz PWM Synchronous Boost Converter
with Output Isolated During Shutdown
General Description
The EMH7021 is a high efficiency, synchronous fixed
frequency, current-mode step-up DC/DC converter.
During shutdown mode, the output is completely
isolated from the input without drawing any battery
current. The fixed 500KHz switching frequency obtains
maximum efficiency up to 96% and uses only a few
external components.
With 150Ω loading, the minimum start-up voltage
can be as low as 0.93V, provided by a one or
two-cell alkaline or one-cell Li-Lon battery.
The features of EMH7021 include current limit, low
battery comparator, open-drain power good output,
short circuit, and thermal shutdown protection. The
EMH7021 is also available in 3X3mm TDFN-10
package.
Applications
Mobile Phone
Digital Still Cameras
Portable applications
MP3 Players
GPS Receivers
Features
Up to 96% efficiency
Reference voltage: 0.5V
Output to input disconnect at shutdown mode
Current delivery
- 1A@VOUT=3.3V, VBAT=2.4V
- 1A@VOUT=5.0V, VBAT=3.6V
Switch current limit protection
500KHz fixed switching frequency
Thermal shutdown protection
0.5V Low-battery comparator
Min-start up voltage: 0.93V
Low quiescent current: 48uA (Tpy.)
Low shutdown current < 1uA
TDFN 3x3mm 10 pins package
Typical Application
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: May 2012
Revision: 1.1
1/16




EMH7021-00FF10NRR pdf, 반도체, 판매, 대치품
ESMT/EMP
EMH7021
Absolute Maximum Ratings (Notes 1, 2)
BAT, EN, OUT, FB and LBO Voltage
-0.3V to 6V
LBI Voltage
-0.3V to VBAT
LX Voltage
-0.3V to (VBAT + 0.3V)
Power Dissipation
(Note 5)
Storage Temperature Range
-65°C to 150°C
Junction Temperature (TJ)
Lead Temperature (Soldering, 10 sec.)
ESD Rating
Human Body Model
Machine model
150°C
260°C
2KV
200V
Operating Ratings (Note 1, 2)
Supply Voltage (VBAT)
Operating Temperature Range
0.9V to 5.0V
-40°C to 85°C
Thermal Resistance (JA , Note 3))
Thermal Resistance (JC , Note 4))
110°C/W
8.5°C/W
Electrical Characteristics
Unless otherwise specified, all limits guaranteed for VOUT=3.3V, VEN=1.2V, TA = 25°C; Boldface limits apply for the operating
temperature extremes: -40°C and 85°C.
Symbol
VSTART-UP
Parameter
Start-Up VBAT
Conditions
RL=150Ω
RL=3.3KΩ
Typ
Min Max
(Note 6)
0.93 1.2
0.85
Units
V
V
VOUT
VFB
Output voltage
Feedback voltage
1.8 5.0
485 500 515
V
mV
FSW
ICL
RDS-ON
Operation Frequency
Current limit
Current limit
@ start-up
RON(NMOS)
RON(PMOS)
ISW = 500mA
ISW = 500mA
400
1.84
500
2.3
0.4*ICL
245
315
600
2.76
kHz
A
A
mΩ
mΩ
IQ
ISD
TSENSOR
VOUT
VBAT
Shutdown current
OTP
hysteresis
VFB=0.6V
VBAT4.2
48
1
1
150
30
μA
μA
μA
(VBAT or VOUT >1.8V)
0.9
V
VIH
(VBAT or VOUT <1.8V)
0.9*VBAT
V
(VBAT or VOUT >1.8V)
VIL
(VBAT or VOUT <1.8V)
Line regulation
ILOAD=100mA, VOUT=5.0V,
VBAT=2.4V to 3.6V
Load regulation
VBAT=3.6V, VOUT=5.0V
ILOAD=50mA to 800mA
LBI voltage threshold
VLBI
LBI input hysteresis
475
0.4 V
0.1*VBAT
V
0.6%
(Vomax-vomin)/
(Vimax-vimin)
0.6%
(Vomax-vomin)/
vomin
500 525
mV
35 mV
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: May 2012
Revision: 1.1
4/16

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EMH7021-00FF10NRR 전자부품, 판매, 대치품
ESMT/EMP
EMH7021
Typical Performance Characteristics (cont.)
Unless otherwise specified, VBAT=1.2V, VEN=1.2V, VOUT= 3.3V and TA = 25°C ,L=6.8μH, CIN= Cout =47μF
Load Transient (VBAT=1.2, VOUT=3.3V, IOUT=100mA to 200mA) Load Transient (VBAT=3.6V, VOUT=5.0V, IOUT=100mA to 200mA)
Line Transient (VOUT=3.3V, VBAT=1.8V to 2.4V, IOUT=100mA) Line Transient (VOUT=5.0V, VBAT=3.0V to 3.6V, IOUT=200mA)
Start-Up (VBAT=2.4V, VOUT=3.3V)
Start-Up(VBAT=3.6V, VOUT=5.0V)
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: May 2012
Revision: 1.1
7/16

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EMH7021-00FF10NRR

500KHz PWM Synchronous Boost Converter

Elite Semiconductor
Elite Semiconductor

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