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EMH7023 데이터시트 PDF




Elite Semiconductor에서 제조한 전자 부품 EMH7023은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 EMH7023 기능
기능 500KHz PWM Synchronous Boost Converter
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EMH7023 데이터시트, 핀배열, 회로
ESMT/EMP
EMH7023
500mA, 500KHz PWM Synchronous Boost Converter
with Output Isolated During Shutdown
General Description
The EMH7023 is a high efficiency, synchronous fixed
frequency, current-mode step-up DC/DC converter.
During shutdown mode, the output is completely
isolated from the input without drawing any battery
current. The fixed 500KHz switching frequency obtains
maximum efficiency up to 96% and uses only a few
external components.
With 180loading, the minimum start-up voltage can
be as low as 0.93V, provided by a one or two-cell
alkaline or one-cell Li-Lon battery.
The features of EMH7023 include current limit, low
battery comparator, open-drain power good output,
short circuit, and thermal shutdown protection. The
EMH7023 is also available in E-MSOP-8L package.
Applications
Mobile Phone
Digital Still Cameras
Portable applications
MP3 Players
GPS Receivers
Features
Up to 96% efficiency
Reference voltage: 0.5V
Output to input disconnect at shutdown mode
500mA current delivery
Switch current limit protection
500KHz fixed switching frequency
Thermal shutdown protection
0.5V Low-battery comparator
Min-start up voltage: 0.93V
Low quiescent current: 50uA (Tpy.)
Low shutdown current < 1uA
E-MSOP 8 pins package
Typical Application
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Dec. 2012
Revision: 1.0
1/14




EMH7023 pdf, 반도체, 판매, 대치품
ESMT/EMP
EMH7023
Absolute Maximum Ratings (Notes 1, 2)
BAT, EN, OUT, FB and LBO Voltage
-0.3V to 7V
LBI Voltage
-0.3V to VBAT
LX Voltage (AC transient)
-0.6V to 8V
Power Dissipation
(Note 5)
Storage Temperature Range
-65°C to 150°C
Junction Temperature (TJ)
Lead Temperature (Soldering, 10 sec.)
ESD Rating
Human Body Model
Machine model
150°C
260°C
2KV
200V
Operating Ratings (Note 1, 2)
Supply Voltage (VBAT)
Operating Temperature Range
0.9V to 5.5V
-40°C to 85°C
Thermal Resistance (JA , Note 3))
Thermal Resistance (JC , Note 4))
120°C/W
8.5°C/W
Electrical Characteristics
Unless otherwise specified, all limits guaranteed for VOUT=3.3V, VEN=1.2V, TA = 25°C; Boldface limits apply for the operating
temperature extremes: -40°C and 85°C.
Symbol
VSTART-UP
Parameter
Start-Up VBAT
Conditions
RL=180Ω
RL=3.3KΩ
Typ
Min Max
(Note 6)
0.93 1.2
0.85
Units
V
V
VOUT
VFB
Output voltage
Feedback voltage
1.8 5.5
485 500 515
V
mV
FSW
ICL
RDS-ON
Operation Frequency
Current limit
Current limit
@ start-up
RON(NMOS)
RON(PMOS)
ISW = 500mA
ISW = 500mA
400 500 600
1.2 1.5 1.8
0.5*ICL
250
330
kHz
A
A
mΩ
mΩ
IQ
ISD
TSENSOR
VOUT
VBAT
Shutdown current
OTP
hysteresis
VFB=0.6V
VBAT4.2
50
13
1
150
30
μA
μA
μA
(VBAT or VOUT >1.8V)
0.9
V
VIH
(VBAT or VOUT <1.8V)
0.9*VBAT
V
(VBAT or VOUT >1.8V)
VIL
(VBAT or VOUT <1.8V)
Line regulation
ILOAD=100mA, VOUT=5.0V,
VBAT=2.4V to 3.6V
Load regulation
VBAT=3.6V, VOUT=5.0V
ILOAD=50mA to 500mA
LBI voltage threshold
VLBI
LBI input hysteresis
475
0.4 V
0.1*VBAT
V
0.6%
(Vomax-vomin)/
(Vimax-vimin)
0.6%
(Vomax-vomin)/
vomin
500 525
mV
35 mV
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Dec. 2012
Revision: 1.0
4/14

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EMH7023 전자부품, 판매, 대치품
ESMT/EMP
EMH7023
Typical Performance Characteristics (cont.)
Unless otherwise specified, VBAT=1.2V, VEN=1.2V, VOUT=3.3V, L=6.8μH, CIN=10uF, Cout=47μF and TA=25°C
Load Transient (VBAT=1.2, VOUT=3.3V, IOUT=100mA to 200mA) Load Transient (VBAT=3.6V, VOUT=5.0V, IOUT=100mA to 200mA)
Line Transient (VOUT=3.3V, VBAT=1.8V to 2.4V, IOUT=100mA) Line Transient (VOUT=5.0V, VBAT=3.0V to 3.6V, IOUT=200mA)
RDSON (PMOS) vs. Temperature (ILOAD=500mA)
Temperature vs. PMOS RDS-on
450
400
350
300
250
200
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature ()
RDSON (NMOS) vs. Temperature (ILOAD=500mA)
Temperature vs. NMOS RDS-on
330
310
290
270
250
230
210
190
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature ()
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Dec. 2012
Revision: 1.0
7/14

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