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EMC5042 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 EMC5042
기능 Standalone Linear Li-Ion Charger
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EMC5042 데이터시트, 핀배열, 회로
ESMT/EMP
EMC5042
Standalone Linear Li-Ion Charger (two-cell)
with Thermal Regulation
General Description
The EMC5042 is a complete linear charger for
two-cell lithium-ion batteries. With small TDFN-10
package and few external components, EMC5042 is
well suited for portable applications.
No external sense resistor and blocking diode are
required. Charging current can be programmed
externally with a single resistor. The built-in thermal
regulation facilitates charging with maximum power
without risk of overheating.
The EMC5042 always preconditions the battery with
1/10 of the programmed charge current at the
beginning of a charge cycle, after it verifies that the
battery can be fast-charged. The EMC5042
automatically terminates the charge cycle when
the charge current drops to 1/10th the programmed
value after the final float voltage is reached.
The EMC5042 features 13.5V maximum rating
voltage for AC adapter, and it provides the charge
current up to 1.2A. Other features include battery
temperature monitoring, reverse current protection,
shutdown mode, charging current monitor, under
voltage lockout, automatic recharge and status
indicator.
Features
g Programmable charge current up to 1.2A
g No MOSFET, sense resistor or blocking diode
required
g Complete linear charger in TDFN-10 for
two-cell li-ion batteries
g Thermal regulation maximizes charge rate
without risk of overheating
g Thermistor input for temperature qualified
charging
g Preset 8.4V charge voltage with ±1%
accuracy
g Automatic recharge
g Charge status indicator
g C/10 charge termination
g 5.8V trickle charge threshold
g Battery reverse leakage current less than 1uA
Applications
g Wireless handsets
g Hand-held instruments
g Portable information appliances
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Jul. 2012
Revision: 1.1
1/20




EMC5042 pdf, 반도체, 판매, 대치품
ESMT/EMP
EMC5042
Pin Functions
Name
IN
NC
CHG_SB
PGOODB
GND
ISETA
NC
ENB
TS
BATT
TDFN-10
1
2
3
4
5
6
7
8
9
10
Function
Positive input supply voltage.
Provides power to the charger, VIN can range from 9V to 13.5V and should be bypassed
with at least a 1μF capacitor. When IN pin drops to within 30mV above the BATT pin
voltage, the EMC5042 enters shutdown mode, dropping IBATT to less than 1μA.
Not connected.
Open-Drain charge status output.
An internal N-channel MOSFET connects CHG_SB pin to ground when the battery is
charging. After the charge cycle is completed, the internal N-channel MOSFET is replaced
by a weak pull-down of approximately 25μA, indicating an “VIN present” condition. When
the EMC5042 detects an under voltage lockout condition, CHG_SB is forced high
impedance.
Open-Drain battery power good output.
An internal N-channel MOSFET connects PGOODB pin to ground when VIN is reached to
8.4V. PGOODB is forced low during normal operation.
Ground.
Charge current program, charge current monitor and shutdown pin.
The charge current is programmed by connecting a 1% resistor, RSET, to ground. When
charging in constant-current mode, this pin servos to 1.5V. In all modes, the voltage on this
pin can be used to measure the charge current using the following formula:
IBATT = (VSET / RSET) * 500
The ISETA pin can also be used to shutdown the charger. Disconnecting the program
resistor from ground allows a 1μA current to pull the ISETA pin high. When it reaches the
2.15V shutdown threshold voltage, the charger enters shutdown mode. This pin is also
clamped to approximately 2.5V. Reconnecting RSET to ground will return the charger to
normal operation.
The ISETA pin must not be directly shorted to ground at any condition.
Not connected.
Charge enable input (active low).
This pin is weakly pulled low internally.
TS pin is the input for an external NTC thermistor.
When the TS pin voltage is out of the window, determined by the VTMIN and VTMAX, the
EMC5042 stops charging and indicates a fault condition.
Charge current output and battery voltage feedback.
This pin provides charge current to the battery and regulates the final float voltage to
8.4V. An internal precision resistor divider from this pin sets the float voltage which is
disconnected in shutdown mode.
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Jul. 2012
Revision: 1.1
4/20

4페이지










EMC5042 전자부품, 판매, 대치품
ESMT/EMP
EMC5042
Absolute Maximum Ratings (Notes 1, 2)
VIN, VBATT, VCHGSB, VPROODB, VEN
-0.3V to 15V
VISETA, VTS
-0.3V to 3.6V
Power Dissipation
(Note 5)
Storage Temperature Range
-65°C to 150°C
Junction Temperature (TJ)
150°C
Lead Temperature (Soldering, 10 sec.)
260°C
Operating Ratings (Note 1, 2)
Supply Voltage
Operating Temperature Range
9V to 13.5V
-40°C to 85°C
Thermal Resistance (θJA , Note 3))
Thermal Resistance (θJC , Note 4))
110°C/W
8.5°C/W
Electrical Characteristics
TA = 25°C, VIN = 10V; unless otherwise specified.
Symbol
Parameter
Conditions
Input Operating Voltage
VIN
Range
Charge Mode, RSET = 30K (Note 6)
Standby Mode (Charge
ICC Input Supply Current
Terminated)
Shutdown Mode (RSET Not
Connected, VIN < VBATT or VIN < VUV)
VFLOAT
Regulated Output (Float)
Voltage
0°C TA 85°C
RSET = 1.5K, Current Mode
RSET = 0.75K, Current Mode
IBATT BATT Pin Current
Standby Mode, VBATT = 8.4V
Shutdown Mode
Sleep Mode, VIN = 0V
ITRICKLE Trickle Charge Current
VBATT < VTRICKLE, RSET = 1.5K
VBATT < VTRICKLE, RSET = 0.75K
VTRICKLE
VTRHYS
Trickle Charge Threshold
Voltage
Trickle Charge Hysteresis
Voltage
VMSD
Manual Shutdown Threshold
Voltage
RSET = 1.5K, VBATT Rising
RSET = 1.5K
ISETA Pin Rising
ISETA Pin Falling
VASD
VIN-VBATT Lockout Threshold
Voltage
VIN from High to Low
VIN from Low to High
C/10 Termination Current
ITERM
Threshold
RSET = 1.5K
RSET = 0.75K
VSET ISETA Pin Voltage
RSET = 1.5K, Current Mode
ICHG_SB
CHG_SB Pin Weak Pull-Down
Current
VCHG_SB = 5.0V
VCHG_SB CHG_SB Pin Output Low Voltage ICHG_SB = 5mA
VPOOGDB PGOODB Pin Output Low Voltage IPGOODB = 5mA
Min
9
8.316
-1
-1
-1
Typ
10
300
250
190
8.4
500
1000
0
0
0
60
120
5.8
250
2.15
2.05
30
60
0.1
0.1
1.5
25
0.35
0.35
Max
13.5
Units
V
uA
uA
uA
8.484
1
1
1
V
mA
mA
uA
uA
uA
mA
mA
V
mV
V
V
mV
mV
mA/mA
mA/mA
V
uA
V
V
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Jul. 2012
Revision: 1.1
7/20

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