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EMA1001-50SA08GRR 데이터시트 PDF




Elite Semiconductor에서 제조한 전자 부품 EMA1001-50SA08GRR은 전자 산업 및 응용 분야에서
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부품번호 EMA1001-50SA08GRR 기능
기능 1W Mono Audio Power Amplifier
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EMA1001-50SA08GRR 데이터시트, 핀배열, 회로
ESMT/EMP
EMA1001
1W Mono Audio Power Amplifier
General Description
The EMA1001 is an audio power amplifier primarily
designed for portable communication applications
such as mobile phones and portable multimedia
players (PMP). To an 8Ω BTL load, it can deliver 1 watt of
continuous average power with less than 1% distortion
(THD+N) from a 5VDC supply.
The EMA1001 is pin-compatible to National Semi’s
LM4890 with a superior (THD+N). It does not require
output coupling capacitors or bootstrap capacitors,
and is ideal for mobile phone and other low voltage
applications where minimal power consumption is a
primary requirement.
The EMA1001 features a low-power consumption
shutdown mode, and an internal thermal shutdown
protection mechanism. Advanced pop & click circuitry
is built in to eliminate noises that would otherwise occur
during turn-on and turn-off transitions. The EMA1001 is
unity-gain stable and can be configured by external
gain-setting resistors.
EMP products are Pb-free and RoHS compliant.
Key Specifications
„ PSRR at 217Hz, VDD = 5V (Fig. 1) 60dB(typ.)
„ Power Output at 5.0V & 1% THD 1W(typ.)
„ Power Output at 2.6V & 1% THD 250mW(typ.)
„ Shutdown Current
0.1µA(typ.)
Features
„ Available in space-saving MSOP package
„ Ultra low current shutdown mode
„ BTL output driving capacitive loads
„ Improved pop & click circuitry eliminating noises
during turn-on and turn-off transitions
„ 2.2 - 5.5V operation
„ No output coupling capacitors, snubber networks
or bootstrap capacitors required
„ Thermal shutdown protection
„ Unity-gain stable
„ External gain configuration capability
Applications
„ Mobile Phones
„ PDAs and PMPs
„ Portable Electronic Devices
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : May. 2009
Revision : 5.0
1/19




EMA1001-50SA08GRR pdf, 반도체, 판매, 대치품
ESMT/EMP
EMA1001
Electrical Characteristics VDD = 5V (Notes 1, 2, 8)
The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for TA = 25°C.
Symbol
Parameter
Conditions
Conditions
Typical
Limit
(Note 6) (Notes 7, 9)
Units
(Limits)
IDD
Quiescent Power Supply
VIN = 0V, Io = 0A, No Load
4
Current
VIN = 0V, 8Ω Load
5
8 mA (max)
10 mA (max)
ISD Shutdown Current
VSHUTDOWN = 0V
0.1 1.0 µA (max)
VSDIH
Shutdown Voltage Input high
1.2 V (min)
VSDIL
Shutdown Voltage Input Low
0.4 V (max)
VOS Output Offset Voltage
5
PO Output Power (8Ω)
THD = 1% (max); f = 1 kHz
1.0
25 mV (max)
0.9 W
TWU Wake-up time
Cbypass = 1µF
100 220 ms (max)
TSD Thermal Shutdown
160 140 °C (min)
Temperature
180 °C (max)
THD+N
Total Harmonic Distortion + PO = 0.4 Wrms; f = 1kHz
0.04
%
Noise
PSRR
Power Supply Rejection Ratio Vripple = 200mV sine p-p
60 (f =217Hz)
55
dB (min)
(Note 10)
Input Terminated with 10 65 (f = 1kHz)
ohms to ground
TSDT Shut Down Time
8Ω load
0.1 ms (max)
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : May. 2009
Revision : 5.0
4/19

4페이지










EMA1001-50SA08GRR 전자부품, 판매, 대치품
ESMT/EMP
EMA1001
THD + Noise vs Output Power
@ VDD = 2.6V, RL = 8Ω, 1kHz, AV = 2
PSRR vs Frequency
@ VDD = 2.6V, RL = 8Ω, AV = 2
f=1KHz, RL=8ohm, Av=2, C3=C1=1uF, BW=60KHz
(X=Supply Voltage, Y=Power Out)
Vdd=3.3V, f=1KHz, RL=8ohm, Av=2,C3=C1=1uF,
BW=60KHz (X=Output, Y=Power dissipation)
Output Noise @ 5V
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Output Noise @ 2.2V
Publication Date : May. 2009
Revision : 5.0
7/19

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관련 데이터시트

부품번호상세설명 및 기능제조사
EMA1001-50SA08GRR

1W Mono Audio Power Amplifier

Elite Semiconductor
Elite Semiconductor

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