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부품번호 | EMA1001-50SA08GRR 기능 |
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기능 | 1W Mono Audio Power Amplifier | ||
제조업체 | Elite Semiconductor | ||
로고 | |||
ESMT/EMP
EMA1001
1W Mono Audio Power Amplifier
General Description
The EMA1001 is an audio power amplifier primarily
designed for portable communication applications
such as mobile phones and portable multimedia
players (PMP). To an 8Ω BTL load, it can deliver 1 watt of
continuous average power with less than 1% distortion
(THD+N) from a 5VDC supply.
The EMA1001 is pin-compatible to National Semi’s
LM4890 with a superior (THD+N). It does not require
output coupling capacitors or bootstrap capacitors,
and is ideal for mobile phone and other low voltage
applications where minimal power consumption is a
primary requirement.
The EMA1001 features a low-power consumption
shutdown mode, and an internal thermal shutdown
protection mechanism. Advanced pop & click circuitry
is built in to eliminate noises that would otherwise occur
during turn-on and turn-off transitions. The EMA1001 is
unity-gain stable and can be configured by external
gain-setting resistors.
EMP products are Pb-free and RoHS compliant.
Key Specifications
PSRR at 217Hz, VDD = 5V (Fig. 1) 60dB(typ.)
Power Output at 5.0V & 1% THD 1W(typ.)
Power Output at 2.6V & 1% THD 250mW(typ.)
Shutdown Current
0.1µA(typ.)
Features
Available in space-saving MSOP package
Ultra low current shutdown mode
BTL output driving capacitive loads
Improved pop & click circuitry eliminating noises
during turn-on and turn-off transitions
2.2 - 5.5V operation
No output coupling capacitors, snubber networks
or bootstrap capacitors required
Thermal shutdown protection
Unity-gain stable
External gain configuration capability
Applications
Mobile Phones
PDAs and PMPs
Portable Electronic Devices
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : May. 2009
Revision : 5.0
1/19
ESMT/EMP
EMA1001
Electrical Characteristics VDD = 5V (Notes 1, 2, 8)
The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for TA = 25°C.
Symbol
Parameter
Conditions
Conditions
Typical
Limit
(Note 6) (Notes 7, 9)
Units
(Limits)
IDD
Quiescent Power Supply
VIN = 0V, Io = 0A, No Load
4
Current
VIN = 0V, 8Ω Load
5
8 mA (max)
10 mA (max)
ISD Shutdown Current
VSHUTDOWN = 0V
0.1 1.0 µA (max)
VSDIH
Shutdown Voltage Input high
1.2 V (min)
VSDIL
Shutdown Voltage Input Low
0.4 V (max)
VOS Output Offset Voltage
5
PO Output Power (8Ω)
THD = 1% (max); f = 1 kHz
1.0
25 mV (max)
0.9 W
TWU Wake-up time
Cbypass = 1µF
100 220 ms (max)
TSD Thermal Shutdown
160 140 °C (min)
Temperature
180 °C (max)
THD+N
Total Harmonic Distortion + PO = 0.4 Wrms; f = 1kHz
0.04
%
Noise
PSRR
Power Supply Rejection Ratio Vripple = 200mV sine p-p
60 (f =217Hz)
55
dB (min)
(Note 10)
Input Terminated with 10 65 (f = 1kHz)
ohms to ground
TSDT Shut Down Time
8Ω load
0.1 ms (max)
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : May. 2009
Revision : 5.0
4/19
4페이지 ESMT/EMP
EMA1001
THD + Noise vs Output Power
@ VDD = 2.6V, RL = 8Ω, 1kHz, AV = 2
PSRR vs Frequency
@ VDD = 2.6V, RL = 8Ω, AV = 2
f=1KHz, RL=8ohm, Av=2, C3=C1=1uF, BW=60KHz
(X=Supply Voltage, Y=Power Out)
Vdd=3.3V, f=1KHz, RL=8ohm, Av=2,C3=C1=1uF,
BW=60KHz (X=Output, Y=Power dissipation)
Output Noise @ 5V
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Output Noise @ 2.2V
Publication Date : May. 2009
Revision : 5.0
7/19
7페이지 | |||
구 성 | 총 19 페이지수 | ||
다운로드 | [ EMA1001-50SA08GRR.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
EMA1001-50SA08GRR | 1W Mono Audio Power Amplifier | Elite Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |