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PDF EMA1003 Data sheet ( Hoja de datos )

Número de pieza EMA1003
Descripción 1.2W Fully Differential Audio Power Amplifier
Fabricantes Elite Semiconductor 
Logotipo Elite Semiconductor Logotipo



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No Preview Available ! EMA1003 Hoja de datos, Descripción, Manual

ESMT/EMP
EMA1003
1.2W Fully Differential Audio Power Amplifier with
Shutdown Select
General Description
The EMA1003 is a fully differential audio power amplifier
primarily designed for demanding applications in
mobile phones and other portable communication
device applications. It is capable of delivering 1.2 watt
of continuous average power to an 8Ω BTL load with
less than 1% distortion (THD+N) from a 5VDC power
supply.
The EMA1003 does not require output coupling
capacitors or bootstrap capacitors, and therefore is
ideally suited for mobile phone and other low voltage
applications where minimal power consumption is a
primary requirement.
The EMA1003 features a low-power consumption
shutdown mode. To facilitate this, shutdown may be
enabled by either logic high or low depending on
mode selection. Driving the shutdown mode pin either
high or low enables the shutdown select pin to be
driven in a likewise manner to enable Shutdown.
Additionally, the EMA1003 features an internal thermal
shutdown protection mechanism.
The EMA1003 contains advanced pop & click circuitry
which eliminates noises which would otherwise occur
during turn-on and turn-off transitions.
The EMA1003 is unity-gain stable and can be configured
by external gain-setting resistors.
Key Specifications
Improved PSRR at 217Hz
Power Output at 5.0V, 8Ω& 1% THD
Power Output at 2.6V,8Ω& 1% THD
Shutdown current
70dB(typ)
1.2W(typ)
300mW(typ)
0.1µA (typ)
Features
Fully differential amplification
Available packages MSOP
Ultra low current shutdown mode
Can drive capacitive loads up to 500 pF
Improved pop & click circuitry eliminates noises during
turn-on and turn-off transitions
2.2 - 5.5V operation
No output coupling capacitors, snubber networks or
bootstrap capacitors required
Unity-gain stable
External gain configuration capability
Shutdown high or low selectivity
High CMRR
Applications
Mobile phones
PDAs
Portable electronic devices
Connection Diagram
SDSLCT 1
INN 2
SDMODE 3
4
INP
5
BYPASS
10 OUTP
9
VDD
8
NC
7
GND
6
OUTN
MSOP-10 Package
Order information
EMA1003-50MA10GRR/NRR
50
MA10
GRR
NRR
5.0V Operation
MSOP-10 Package
RoHS(Pb free)
Rating: -40 to 85°C
Package in Tape & Reel
RoHS & Halogen free (By Request)
Rating: -40 to 85°C
Package in Tape & Reel
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : May. 2009
Revision :.2.0
1/12

1 page




EMA1003 pdf
ESMT/EMP
Typical Performance Characteristics
EMA1003
THD + Noise vs Frequency
@ VDD = 2.6V, RL = 4Ω, Po = 150mW
THD + Noise vs Frequency
@ VDD = 5V, RL = 4Ω, Po = 1W
THD + Noise vs Frequency
@ VDD = 2.6V, RL = 8Ω, Po = 150mW
THD + Noise vs Frequency
@ VDD = 5V, RL =8Ω, Po = 400mW
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : May. 2009
Revision :.2.0
5/12

5 Page





EMA1003 arduino
ESMT/EMP
Revision History
Revision
2.0
Date
2009.05.05
Description
EMP transferred from version 1.1
EMA1003
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : May. 2009
Revision :.2.0
11/12

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