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PDF EMA2016-50SA16NRR Data sheet ( Hoja de datos )
| Número de pieza | EMA2016-50SA16NRR | |
| Descripción | 2.5W/CH Stereo Filter-less Class-D Audio Amplifier | |
| Fabricantes | Elite Semiconductor | |
| Logotipo |  |
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ESMT/EMP
EMA2016
2.5W/CH Stereo Filter-less Class-D Audio Amplifier
Features
z Supply voltage range: 2.8 V to 5.5 V
z Support single-ended or differential analog input
z Low static operation current
z Low shut-down current
z Short power-on transient time (1ms)
z Internal pull-low resistor on shut-down pins
z Independent shut-down control for left or right
channel
z Short-circuit protection
z Over-temperature protection
z Loudspeaker power within 10% THD+N
1.5W/ch into 8Ω loudspeaker
2.5W/ch into 4Ω loudspeaker
z Loudspeaker efficiency
89% @ 8Ω, THD+N=10%
82% @ 4Ω, THD+N=10%
Applications
z Monitor audio
z PDA
z Portable multimedia devices
z Notebook computer
z Mobile phone
Description
The EMA2016 is a stereo, filter-less class-D audio
amplifier. Operating with 5.0V loudspeaker driver
supply, it can deliver 1.5W/ch output power into 8 Ω
loudspeaker and 2.5W/ch output power into 4 Ω
loudspeaker within 10% THD+N.
The EMA2016 packaged as SOP 16L is a stereo
audio amplifier with high efficiency and proper
thermal resistance, which leads to longer battery life
and less heat sink requirement. It’s suitable for the
notebook computer, and portable multimedia
devices. EMA2016 with the independent shut-down
control for left or right channel, That’s a better
solution for low cost Class-D system.
Ordering Information
Product ID
EMA2016-50SA16NRR
Package
SOP 16L
Comments
Green
Packing
Tape & Reel
2.5K units
Marking Information
Line 1：LOGO
Line 2：Product No
Line 3：Tracking Code
Elite Semiconductor Memory Technology Inc.
/ Elite MicroPower Inc.
Publication Date: Oct. 2009
Revision: 1.0
1/16
1 page  
ESMT/EMP
EMA2016
Electrical Characteristics and Specifications of Loudspeaker Driver
z Gain= 2 V/V, Load=8Ω, fin=1 kHz, TA=25°C (unless otherwise noted)
SYMBOL
PARAMETER
CONDITION
MIN TYP MAX UNIT
THD+N = 10 %
PVDD=5.0V
THD+N = 1 %
PO RMS Output Power per Channel
THD+N = 10 %
PVDD=3.6V
THD+N = 1 %
1.6
1.3
0.82
0.66
W
W
W
W
THD+N
Total Harmonic Distortion plus
Noise
PVDD=5.0V, Po=1.0W
PVDD=3.6V, Po=0.5W
0.2
0.23
%
%
SNR
Signal to Noise Ratio
PSRR
Power Supply Rejection Ratio
CMRR
Crosstalk
Vn
η
Common-Mode Rejection Ratio
Crosstalk
Output integrated noise
(A-weighted)
Efficiency
PVDD=5.0V, Po=1.0W
PVDD=3.6V, Vripple=200mVpp
Inputs ac grounded with Ci=2μF
f=217 Hz
PVDD=3.6V, VIC=0.1Vpp, f=217Hz
PVDD=5V, fin=1kHz Vo=2Vpp
PVDD=3.6V
fin=20Hz ~ 20kHz
PVDD=5V, THD+N=10%
93
-56
-50
-91
80
89
dB
dB
dB
dB
μV
%
z Gain= 2 V/V, Load=4Ω, fin=1 kHz, TA=25°C (unless otherwise noted)
SYMBOL
PARAMETER
CONDITION
MIN TYP MAX UNIT
THD+N = 10 %
PVDD=5.0V
THD+N = 1 %
PO RMS Output Power per Channel
THD+N = 10 %
PVDD=3.6V
THD+N = 1 %
2.6
2.05
1.3
1.05
W
W
W
W
THD+N
Total Harmonic Distortion plus
Noise
PVDD=5.0V, Po=1.8W
PVDD=3.6V, Po=1.0W
0.18
0.22
%
%
SNR
PSRR
CMRR
Signal to Noise Ratio
Power Supply Rejection Ratio
Common-Mode Rejection Ratio
PVDD=5.0V, Po=1.5W
PVDD=3.6V, Vripple=200mVpp
Inputs ac grounded with Ci=2μF
f=217 Hz
PVDD=3.6V, VIC=0.1Vpp, f=217Hz
91
-55
-50
dB
dB
dB
Crosstalk
Crosstalk
PVDD=5V, fin=1kHz, Vo=2Vpp
-92 dB
Vn
Output integrated noise
(A-weighted)
PVDD=3.6V
fin=20Hz ~ 20kHz
73 μV
η
Efficiency
PVDD=5V, THD+N=10%
82 %
Elite Semiconductor Memory Technology Inc.
/ Elite MicroPower Inc.
Publication Date: Oct. 2009
Revision: 1.0
5/16
5 Page 
ESMT/EMP
EMA2016
Application information
z Input resistors (Rin) and input capacitors (Cin)
The total gain of the audio amplifier (EMA2016) is set by input resistor (Rin) according to
the following equation (a). The performance at low frequency (bass) is affected by the
corner frequency (fc) of the high-pass filter composed of input resistors (Rin) and input
capacitors (Cin), determined in equation (b).
( )Gain = 300kΩ
Rin
V
V
LLL (a)
1
fc = 2πRinCin
(Hz)
LLL (b)
For differential audio signal application, the input capacitors (Cin), for DC decoupling,
are not required. When single-ended audio source is used, the input capacitors (Cin) are
required.
z Decoupling capacitor (Cs)
Because of the power loss on the trace, which is between the device and decoupling
capacitor, the decoupling capacitor should be placed as close as to the device PVDD
and PGND to reduce any parasitic resistor or inductor between them. And, a low ESR
ceramic capacitor, typically 1μF, is suggested for high frequency transients. For filtering
audio band noise signal, a 10μF or greater capacitor (tantalum or electrolytic type) is
suggested, but it is not required for most applications because of the high PSRR of this
device.
Elite Semiconductor Memory Technology Inc.
/ Elite MicroPower Inc.
Publication Date: Oct. 2009
Revision: 1.0
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet EMA2016-50SA16NRR.PDF ] | |
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