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PDF 25Q16CV Data sheet ( Hoja de datos )
| Número de pieza | 25Q16CV | |
| Descripción | 3V 16M-BIT SERIAL FLASH MEMORY | |
| Fabricantes | Winbond | |
| Logotipo |  |
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W25Q16CV
3V 16M-BIT
SERIAL FLASH MEMORY WITH
DUAL AND QUAD SPI
Publication Release Date: May 22, 2014
- 1 - Revision H
1 page  
W25Q16CV
1. GENERAL DESCRIPTION
The W25Q16CV (16M-bit) Serial Flash memory provides a storage solution for systems with limited
space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial
Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI
(XIP) and storing voice, text and data. The device operates on a single 2.7V to 3.6V power supply with
current consumption as low as 4mA active and 1µA for power-down.
The W25Q16CV array is organized into 8,192 programmable pages of 256-bytes each. Up to 256 bytes
can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128
(32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q16CV
has 512 erasable sectors and 32 erasable blocks respectively. The small 4KB sectors allow for greater
flexibility in applications that require data and parameter storage. (See figure 2.)
The W25Q16CV supports the standard Serial Peripheral Interface (SPI), and a high performance
Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1
(DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing
equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz (104MHz x 4) for Quad I/O
when using the Fast Read Dual/Quad I/O instructions. These transfer rates can outperform standard
Asynchronous 8 and 16-bit Parallel Flash memories. The Continuous Read Mode allows for efficient
memory access with as few as 8-clocks of instruction-overhead to read a 24-bit address, allowing true
XIP (execute in place) operation.
A Hold pin, Write Protect pin and programmable write protection, with top or bottom array control,
provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and
device identification with a 64-bit Unique Serial Number.
2. FEATURES
Family of SpiFlash Memories
– W25Q16CV: 16M-bit / 2M-byte (2,097,152)
– 256-byte per programmable page
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
Highest Performance Serial Flash
– 104MHz Dual SPI / Quad SPI clocks
– 208/416MHz equivalent Dual/Quad SPI
– 52MB/S continuous data transfer rate
– Up to 8X that of ordinary Serial Flash
– More than 100,000 erase/program cycles(1)
– More than 20-year data retention
Efficient “Continuous Read Mode”
– Low Instruction overhead
– Continuous Read with 8/16/32/64-Byte Wrap
– As few as 8 clocks to address memory
– Allows true XIP (execute in place) operation
– Outperforms X16 Parallel Flash
Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
– 4mA active current, <1µA Power-down (typ.)
– -40°C to +85°C operating range
Flexible Architecture with 4KB sectors
– Uniform Sector/Block Erase (4/32/64K-bytes)
– Program one to 256 bytes
– Erase/Program Suspend & Resume
Advanced Security & Identification Features
– Software and Hardware Write-Protect
– Top/Bottom, 4KB complement array protection
– Power Supply Lock-Down and OTP protection
– 64-Bit Unique ID for each device
– Discoverable Parameters (SFDP) Register
– 3X256-Byte Security Registers with OTP locks
– Volatile & Non-volatile Status Register Bits
Space Efficient Packaging(1)
– 8-pin SOIC/VSOP 150/208-mil
– 8-pad WSON 6x5-mm
– 8-pin PDIP 300-mil
– 16-pin SOIC 300-mil
– 24-ball TFBGA 8x6-mm (6x4/5x5 ball array)
– Contact Winbond for KGD and other options
Note 1. Some package types are special orders, please contact Winbond for ordering information.
Publication Release Date: May 22, 2014
- 5 - Revision H
5 Page 
W25Q16CV
5. BLOCK DIAGRAM
SFDP Register
000000h
0000FFh
Block Segmentation
xxFF00h
• Sector 15 (4KB)
xxF000h
xxFFFFh
•
xxF0FFh
xxEF00h
• Sector 14 (4KB)
xxE000h
xxEFFFh
•
xxE0FFh
xxDF00h
• Sector 13 (4KB)
xxD000h
xxDFFFh
•
xxD0FFh
•
•
•
xx2F00h
•
xx2000h
xx1F00h
•
xx1000h
xx0F00h
•
xx0000h
Sector 2 (4KB)
Sector 1 (4KB)
Sector 0 (4KB)
xx2FFFh
•
xx20FFh
xx1FFFh
•
xx10FFh
xx0FFFh
•
xx00FFh
/WP (IO2)
Write Control
Logic
Status
Register
/HOLD (IO3)
CLK
/CS
DI (IO0)
DO (IO1)
SPI
Command &
Control Logic
High Voltage
Generators
Page Address
Latch / Counter
Data
Byte Address
Latch / Counter
Security Register 1 - 3
003000h
002000h
001000h
0030FFh
0020FFh
0010FFh
1FFF00h
1FFFFFh
• Block 31 (64KB)
•
1F0000h
1F00FFh
•
•
•
10FF00h
10FFFFh
• Block 16 (64KB)
•
100000h
1000FFh
0FFF00h
•
0F0000h
Block 15 (64KB)
•
•
•
0FFFFFh
•
0F00FFh
08FF00h
• Block 8 (64KB)
080000h
08FFFFh
•
0800FFh
07FF00h
•
070000h
Block 7 (64KB)
•
•
•
07FFFFh
•
0700FFh
00FF00h
•
000000h
Block 0 (64KB)
00FFFFh
•
0000FFh
Beginning
Page Address
Ending
Page Address
Column Decode
And 256-Byte Page Buffer
Figure 2. W25Q16CV Serial Flash Memory Block Diagram
- 11 -
Publication Release Date: May 22, 2014
Revision H
11 Page | ||
| Páginas | Total 70 Páginas | |
| PDF Descargar | [ Datasheet 25Q16CV.PDF ] | |
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