(PDF) SPP2305W Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	SPP2305W
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPP2305W P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2305W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES -15V/-3.5A,RDS(ON)= 70mΩ@VGS=-4.5V -15V/-3.0A,RDS(ON)= 85mΩ@VGS=-2.5V -15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PIN CONFIGURATION(SOT-23) 2011/07/14 Ver.2 PART MARKING S05WYW Page 1 1 page SPP2305W P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/07/14 Ver.2 Page 5 5 Page

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PDF SPP2305W Data sheet ( Hoja de datos )