(PDF) SPP2309S23RG Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	SPP2309S23RG
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPP2309 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES P-Channel -20V/2.5A,RDS(ON)= 0.35Ω@VGS=-4.5V -20V/1.5A,RDS(ON)= 0.48Ω@VGS=-2.5V -20V/0.7A,RDS(ON)= 0.75Ω@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design PIN CONFIGURATION(SOT-23-3L) PART MARKING 2008/01/08 Ver.1 Page 1 1 page SPP2309 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2008/01/08 Ver.1 Page 5 5 Page

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PDF SPP2309S23RG Data sheet ( Hoja de datos )