(PDF) SPP3413W Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	SPP3413W
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPP3413W P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3413W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. FEATURES -20V/-3.4A,RDS(ON)= 95mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V -20V/-1.7A,RDS(ON)=145mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter PIN CONFIGURATION(SOT-23) PART MARKING 2012/04/18 Ver.2 Page 1 1 page SPP3413W P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2012/04/18 Ver.2 Page 5 5 Page

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PDF SPP3413W Data sheet ( Hoja de datos )