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PDF TLP665J Data sheet ( Hoja de datos )
| Número de pieza | TLP665J | |
| Descripción | GaAs IRED & PHOTO-TRIAC | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC
TLP665J(S)
TLP665J(S)
Office Equipment
Household Appliances
Triac Drivers
Solid State Relays
Unit: mm
The TOSHIBA TLP665J(S) consists of a gallium arsenide infrared
emitting diode optically coupled to a triac-output photocoupler housed in
a 6-pin DIP package.
• Peak Off-State Voltage: 600 V (min)
• Trigger LED Current:10 mA (max)
• On-State Current: 100 mA (max)
• Isolation Voltage: 5000 Vrms (min)
• UL Recognized: UL1577, File No.E67349
• SEMKO Approved: SS EN60065
SS EN60950, File No.9841111
• BSI Approved: BS EN60065, File No. 8385
BS EN60950, File No. 8386
• Option (D4) type
VDE approved: DIN EN60747-5-2
Approved No. 40009302
Maximum operating insulation voltage: 890 VPK
Maximum permissible overvoltage: 8000 VPK
Note: When ordering an EN60747-5-2 approved device,
"Option (D4)" should be designated.
• Construction Mechanical Rating
7.62 mm pitch
Standard Type
Creepage Distance
Clearance
Insulation Thickness
7.0 mm (min)
7.0 mm (min)
0.5 mm (min)
10.16 mm pitch
TLPxxxxF Type
8.0 mm (min)
8.0 mm (min)
0.5 mm (min)
JEDEC
-
TOSHIBA
11-7A9
Weight: 0.39 g(typ.)
Pin Configuration
(top view)
16
2
34
1: Anode
2: Csthode
3: N.C.
4:Terminal 1
6:Terminal 2
1 2010-10-01
1 page  
TLP665J(S)
5 2010-10-01
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TLP665J.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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| TLP665JS | GaAs IRED & PHOTO-TRIAC | Toshiba Semiconductor |
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