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EMP8042 데이터시트 PDF




Elite Semiconductor에서 제조한 전자 부품 EMP8042은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 EMP8042 기능
기능 Low-Dropout Linear Regulator
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EMP8042 데이터시트, 핀배열, 회로
ESMT/EMP
EMP8042
High Input Voltage, Low Quiescent Current,
Low-Dropout Linear Regulator
General Description
The EMP8042 is a high voltage, low quiescent current,
low dropout regulator with 100mA output driving
capacity. The EMP8042, which operates over an
input range of 3V to 20V, is stable with any
capacitors, whose capacitance is larger than 1μF,
and suitable for powering battery-management ICs
because of the virtue of its low quiescent current
consumption and low dropout voltage. Below the
maximum power dissipation (please refer to Note. 5),
It guarantees delivery of 100mA output current, and
supports preset output voltages ranging from 1.3V to
6.0V with 0.1V increment.
EMP8042 also includes bandgap voltage reference,
constant current limiting and thermal overload
protection. It’s available in miniature SOT-89-3
packages.
Applications
g Logic Supply for High Voltage Batteries
g Keep-Alive Supply
g 3-4 Cell Li-ion Batteries Powered systems
Features
g 100mA guaranteed output current (without
thermal limit)
g 500mV typical dropout at Io=100mA
g 3.0V to 20V input range
g Stable with small ceramic output capacitors
(1µF)
g Over temperature and over current
protection
g ±2.5% output voltage tolerance
Typical Application
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Feb. 2011
Revision: 1.0
1/12




EMP8042 pdf, 반도체, 판매, 대치품
ESMT/EMP
EMP8042
Absolute Maximum Ratings (Notes 1, 2)
VIN -0.3V to 22V
Power Dissipation
(Note 3)
Storage Temperature Range
-65°C to 150°C
Junction Temperature (TJ)
160°C
Lead Temperature (Soldering, 10 sec.)
ESD Rating
Human Body Model
260°C
2KV
Operating Ratings (Note 1, 2)
Supply Voltage
Operating Temperature Range
3.0V to 20V
-40°C to 85°C
Thermal Resistance (θJA , Note 3))
Thermal Resistance (θJC , Note 4))
101°C/W (SOT-89-3)
54°C/W (SOT-89-3)
Electrical Characteristics
TA = 25°C, VOUT(NOM)=5V; unless otherwise specified, all limits guaranteed for VIN = VOUT +1V, CIN = COUT =1µF.
Symbol
Parameter
Conditions
VIN
ΔVOTL
IOUT
ILIMIT
IQ
VDO
ΔVOUT
Input Voltage
0.1mA IOUT 100mA
Output Voltage Tolerance
VOUT (NOM) +1V VIN 20V
Maximum Output Current Average DC Current Rating
Output Current Limit
Supply Current
IOUT = 0.1mA
IOUT = 100mA
Dropout Voltage
IOUT = 30mA
VOUT=5.0V (Note. 7)
IOUT = 100mA
Line Regulation
IOUT = 1mA,
(VOUT + 1V) VIN 20V
Load Regulation
0.1mA IOUT 100mA
Typ
Min
Max
Units
(Note 6)
3.0 20 V
-2.5
+2.5
% of
VOUT (NOM)
100 mA
300 mA
70
µA
50 100
135
mV
500
0.1 %
0.5 %
IOUT=10mA,10Hz f 100kHz
en Output Voltage Noise
VOUT = 5.0V
Thermal Shutdown
Temperature
TSD
Thermal Shutdown
Hysteresis
tON Start-Up Time
COUT = 1.0µF, VOUT at 90% of
Final Value
800 µVRMS
160
30
500 µs
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Feb. 2011
Revision: 1.0
4/12

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EMP8042 전자부품, 판매, 대치품
ESMT/EMP
EMP8042
Typical Performance Characteristics (cont.)
Unless otherwise specified, VIN = VOUT (NOM) + 1V, VOUT=5V, CIN = COUT = 1.0µF, TA = 25°C
Line transient (IOUT=1mA)
Line transient (IOUT=30mA)
Vin
(1V/div)
Vin
(1V/div)
Vout
(20mV/div)
Time
(100us/div)
Load transient (VOUT=5.0V)
Vout
(50mV/div)
Time
(100us/div)
Load transient (VOUT=5.0V)
Iout
(50mA/div)
Vout
(200mV/div)
Time
(100us/div)
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Feb. 2011
Revision: 1.0
7/12

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