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PDF EMP8042-33VG03NRR Data sheet ( Hoja de datos )
| Número de pieza | EMP8042-33VG03NRR | |
| Descripción | Low-Dropout Linear Regulator | |
| Fabricantes | Elite Semiconductor | |
| Logotipo |  |
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ESMT/EMP
EMP8042
High Input Voltage, Low Quiescent Current,
Low-Dropout Linear Regulator
General Description
The EMP8042 is a high voltage, low quiescent current,
low dropout regulator with 100mA output driving
capacity. The EMP8042, which operates over an
input range of 3V to 20V, is stable with any
capacitors, whose capacitance is larger than 1μF,
and suitable for powering battery-management ICs
because of the virtue of its low quiescent current
consumption and low dropout voltage. Below the
maximum power dissipation (please refer to Note. 5),
It guarantees delivery of 100mA output current, and
supports preset output voltages ranging from 1.3V to
6.0V with 0.1V increment.
EMP8042 also includes bandgap voltage reference,
constant current limiting and thermal overload
protection. It’s available in miniature SOT-89-3
packages.
Applications
g Logic Supply for High Voltage Batteries
g Keep-Alive Supply
g 3-4 Cell Li-ion Batteries Powered systems
Features
g 100mA guaranteed output current (without
thermal limit)
g 500mV typical dropout at Io=100mA
g 3.0V to 20V input range
g Stable with small ceramic output capacitors
(1µF)
g Over temperature and over current
protection
g ±2.5% output voltage tolerance
Typical Application
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Feb. 2011
Revision: 1.0
1/12
1 page  
ESMT/EMP
EMP8042
Note 1: Absolute maximum ratings indicate limits beyond which damage may occur.
Note 2: All voltages are in respect to the potential of the ground pin.
Note 3: θJA is measured in the natural convection at TA=25℃ on a high effectively thermal conductivity test board (2
layers, 2S0P).
Note 4: θJC represents the resistance between the chip and the top of the package case.
Note 5: Maximum power dissipation for the device is calculated using the following equation:
PD
=
TJ(MAX)
θJA
-
TA
Where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θJA is the
junction-to-ambient thermal resistance. For example, for the SOT-89-3 package θ JA=101°C/W,
TJ(MAX)=160°C and using TA=25°C, the maximum power dissipation is 1.33W.
The derating factor (-1/θJA)=-9.9mW/°C. Below 25°C the power dissipation figure can be increased by
9.9mW per degree and similarly decreased by this factor for temperatures above 25°C.
Note 6: Typical values represent the most likely parametric norm.
Note 7: Dropout voltage is measured by reducing VIN until VOUT drops to 98% its nominal value.
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Feb. 2011
Revision: 1.0
5/12
5 Page 
ESMT/EMP
Revision History
Revision
0.1
Date
2010.08.27
1.0 2011.02.23
EMP8042
Description
Original
1. Skip “Preliminary”
2. Page1 revise “Typical Application“
3. Page2 add SOT-23-5 package
4. Page3 add SOT-23-5 “Pin Functions”
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Feb. 2011
Revision: 1.0
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet EMP8042-33VG03NRR.PDF ] | |
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