Datasheet.kr   

EMP8021-28VF05NRR 데이터시트 PDF




Elite Semiconductor에서 제조한 전자 부품 EMP8021-28VF05NRR은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 EMP8021-28VF05NRR 자료 제공

부품번호 EMP8021-28VF05NRR 기능
기능 600mA CMOS Linear Regulator
제조업체 Elite Semiconductor
로고 Elite Semiconductor 로고


EMP8021-28VF05NRR 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 13 페이지수

미리보기를 사용할 수 없습니다

EMP8021-28VF05NRR 데이터시트, 핀배열, 회로
ESMT/EMP
Preliminary
EMP8021
600mA CMOS Linear Regulator
General Description
The EMP8021 low-dropout (LDO) CMOS linear regulators
feature low output voltage noise (63µV), low quiescent
current (50µA), and fast transient response. It
guarantees delivery of 600mA output current, and
supports preset output voltages ranging from 0.8V to
4.75V with 0.05V increment.
Applications
g Wireless handsets
g PCMCIA cards
g DSP core power
g Hand-held instruments
g Battery-powered systems
g Portable information appliances
The EMP8021 is ideal for battery-powered applications
by virtue of its low quiescent current consumption and
its 1nA shutdown mode of logical operation. The
regulator provides fast turn-on and start-up time by
using dedicated circuitry to pre-charge an optional
external bypass capacitor. This bypass capacitor is used
to reduce the output voltage noise without adversely
affecting the load transient response. The regulator is
stable with small ceramic capacitive loads (2.2µF
typical).
Additional features include bandgap voltage
reference, constant current limiting and thermal
overload protection. The EMP8021 is available in
miniature 5-pin SOT-23-5 package.
Features
g Miniature SOT-23-5 packages
g 600mA guaranteed output current
g 63µV RMS output voltage noise (10Hz to 100kHz)
(Vout=3.3V, Cbypass=10nF)
g 580mV typical dropout at 600mA(Vout=3.3V)
g 270mV typical dropout at 300mA(Vout=3.3V)
g 50µA typical quiescent current
g 1nA typical shutdown mode
g Fast line and load transient response
g 140µs typical fast turn-on time (Vout=3.3V,
Cbypass=10nF)
g 2.2V to 5.5V input range
g Stable with small ceramic output capacitors
g Over temperature and over current protection
g ±2% output voltage tolerance
Typical Application
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Apr. 2011
Revision: 0.3
1/13




EMP8021-28VF05NRR pdf, 반도체, 판매, 대치품
ESMT/EMP
Preliminary
EMP8021
Absolute Maximum Ratings (Notes 1, 2)
VIN, VOUT, VEN
-0.3V to 6.0V
Power Dissipation
(Note 5)
Storage Temperature Range
-65°C to 150°C
Junction Temperature (TJ)
150°C
Lead Temperature (Soldering, 10 sec.)
ESD Rating
Human Body Model (Note 5)
MM
260°C
2KV
200V
Operating Ratings (Note 1, 2)
Supply Voltage
Storage Temperature Range
2.2V to 5.5V
-40°C to 85°C
Thermal Resistance (θJA)(Note 3)
Thermal Resistance (θJC)(Note 4)
135°C /W(SOT-23-5)
81°C /W(SOT-23-5)
Electrical Characteristics
Unless otherwise specified, all limits guaranteed for VIN = VOUT +1V (Note 8), VEN = VIN, CIN = COUT = 2.2µF, CCC = 33nF, TA =
25°C. Boldface limits apply for the operating temperature extremes: -40°C and 85°C.
Symbol
Parameter
Conditions
Typ
Min
Max
Units
(Note 6)
VIN Input Voltage
2.2 5.5 V
ΔVOTL
100µA IOUT 600mA
Output Voltage Tolerance VOUT (NOM) +1V VIN 5.5V
(Note 8)
-2
-3
+2
% of
VOUT (NOM)
+3
IOUT Maximum Output Current Average DC Current Rating 600
mA
ILIMIT Output Current Limit
Supply Current
IQ
IOUT = 0mA
IOUT = 600mA
Shutdown Supply Current VOUT = 0V, EN = GND
620 700
50
225
0.001
mA
µA
1
Dropout Voltage
VDO
IOUT = 600mA
ΔVOUT
Line Regulation
Load Regulation
en Output Voltage Noise
VOUT = 2.8V
VOUT = 3.3V
IOUT = 1mA, (VOUT + 1V) VIN
5.5V
(Note 9)
100µA IOUT 600mA
IOUT=10mA,10Hz f 100kHz
VOUT = 3.3V,Cbypass = 33nF
-0.1
644
580
0.02
0.001
63
mV
0.1 %/V
%/mA
µVRMS
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Apr. 2011
Revision: 0.3
4/13

4페이지










EMP8021-28VF05NRR 전자부품, 판매, 대치품
ESMT/EMP
Preliminary
EMP8021
Typical Performance Characteristics (cont.)
Unless otherwise specified, VIN = VOUT (NOM) + 1V, CIN = COUT = 2.2µF, CCC = 33nF, TA = 25°C, VEN = VIN.
Enable Response (VOUT=3.3V, IOUT=0mA)
Enable Response (VOUT=3.3V, IOUT=100mA)
PSRR vs. Frequency (VIN=5.0V, VOUT=3.3V)
PSRR vs. Frequency (VIN=4.3V, VOUT=3.3V)
Current Limit (VOUT=3.3V)
Noise Level (VOUT=3.3V, IOUT=10mA)
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date: Apr. 2011
Revision: 0.3
7/13

7페이지


구       성 총 13 페이지수
다운로드[ EMP8021-28VF05NRR.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
EMP8021-28VF05NRR

600mA CMOS Linear Regulator

Elite Semiconductor
Elite Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵