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PDF EMP8736-00VF05NRR Data sheet ( Hoja de datos )
| Número de pieza | EMP8736-00VF05NRR | |
| Descripción | 300mA CMOS Linear Regulator | |
| Fabricantes | Elite Semiconductor | |
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ESMT/EMP
EMP8736
Fast Ultra High-PSRR, Low-Noise, 300mA
CMOS Linear Regulator
General Description
The EMP8736 features ultra-high power supply rejection
ratio, low output voltage noise, low dropout voltage,
low quiescent current and fast transient response. It
guarantees delivery of 300mA output current and
supports adjustable output voltages by using two
external resistors.
Based on its low quiescent current consumption and its
less than 1μA shutdown mode of logical operation, the
EMP8736 is ideal for battery-powered applications. The
high power supply rejection ratio of the EMP8736 holds
well for low input voltages typically encountered in
battery-operated systems. The regulator is stable with
small ceramic capacitive loads (1µF typical). The
EMP8736 is available in miniature SOT-23-5 packages.
Typical Application
Features
g 300mA guaranteed output current
g 65dB typical PSRR at 1kHz
g 110µV RMS output voltage noise (10Hz to 100kHz)
g 290mV typical dropout at 300mA
g 57µA typical quiescent current
g Less than 1μA typical shutdown mode
g Fast line and load transient response
g 2.2V to 5.5V input range
g Auto-discharge during chip disable
g 80µs typical turn-on time
g Stable with small ceramic output capacitors
g Over temperature and over current protection
g ±2% output voltage tolerance
Applications
g Wireless handsets
g PCMCIA cards
g DSP core power
g Hand-held instruments
g Battery-powered systems
g Portable information appliances
Fig 1. The typical application circuit.
Elite Semiconductor Memory Technology Inc. / Elite MicroPower Inc.
Publication Date: Nov. 2009
Revision: 1.0
1/14
1 page  
ESMT/EMP
EMP8736
Note 1: Absolute Maximum ratings indicate limits beyond which damage may occur. Electrical specifications do not
apply when operating the device outside of its rated operating conditions.
Note 2: All voltages are with respect to the potential at the ground pin.
Note 3: Condition does not apply to input voltages below 2.2V since this is the minimum input operating voltage.
Note 4: Dropout voltage is measured by reducing VIN until VOUT drops 100mV from its nominal value at VIN -VOUT = 1V.
Dropout voltage does not apply to the regulator versions with VOUT less than 2.2V.
Note 5: Turn-off time is time measured between the enable input just decreasing below VIL and the output voltage just
decreasing to 10% of its nominal value.
Note 6: Maximum Power dissipation for the device is calculated using the following equations:
PD
=
TJ(MAX)
θJA
-
TA
where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θ JA is the
junction-to-ambient thermal resistance. E.g. for the SOT-25 packageθJA = 250°C/W, TJ(MAX) = 150°C and using TA
= 25°C, the maximum power dissipation is found to be 500mW. The derating factor (-1/θJA) = -4mW/°C, thus
below 25°C the power dissipation figure can be increased by 4mW per degree, and similarity decreased by
this factor for temperatures above 25°C. The value of theθJA for the FBP-6 package is specifically dependent
on the PCB trace area, trace material, and the number of layers and thermal vias.
Elite Semiconductor Memory Technology Inc. / Elite MicroPower Inc.
Publication Date: Nov. 2009
Revision: 1.0
5/14
5 Page 
ESMT/EMP
EMP8736
Power Dissipation and Thermal Shutdown
Thermal overload results from excessive power dissipation that causes the IC junction temperature to increase
beyond a safe operating level. The EMP8736 relies on dedicated thermal shutdown circuitry to limit its total power
dissipation. An IC junction temperature TJ exceeding 165°C will trigger the thermal shutdown logic, turning off the
P-channel MOS pass transistor. The pass transistor turns on again after the junction cools off by about 30°C. When
continuous thermal overload conditions persist, this thermal shutdown action then results in a pulsed waveform at the
output of the regulator. The concept of thermal resistance θJA (°C/W) is often used to describe an IC junction’s
relative readiness in allowing its thermal energy to dissipate to its ambient air. An IC junction with a low thermal
resistance is preferred because it is relatively effective in dissipating its thermal energy to its ambient, thus resulting in a
relatively low and desirable junction temperature. The relationship between θJA and TJ is as follows:
TJ =θJA x (PD) + TA
TA is the ambient temperature, and PD is the power generated by the IC and can be written as:
PD = IOUT (VIN - VOUT)
As the above equations show, it is desirable to work with ICs whose θJA values are small such that TJ does not increase
strongly with PD. To avoid thermally overloading the EMP8736, refrain from exceeding the absolute maximum junction
temperature rating of 150°C under continuous operating conditions. Overstressing the regulator with high loading
currents and elevated input-to-output differential voltages can increase the IC die temperature significantly.
Shutdown
The EMP8736 enters the sleep mode when the EN pin is low. When this occurs, the pass transistor, the error amplifier,
and the biasing circuits, including the bandgap reference, are turned off, thus reducing the supply current to typically
1nA. Such a low supply current makes the EMP8736 best suited for battery-powered applications. The maximum
guaranteed voltage at the EN pin for the sleep mode to take effect is 0.4V. A minimum guaranteed voltage of 1.2V at
the EN pin will activate the EMP8736. Direct connection of the EN pin to the VIN to keep the regulator on is allowed for
the EMP8736. In this case, the EN pin must not exceed the supply voltage VIN.
Elite Semiconductor Memory Technology Inc. / Elite MicroPower Inc.
Publication Date: Nov. 2009
Revision: 1.0
11/14
11 Page | ||
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| PDF Descargar | [ Datasheet EMP8736-00VF05NRR.PDF ] | |
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