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PDF EMP8915-18VF05GRR Data sheet ( Hoja de datos )
| Número de pieza | EMP8915-18VF05GRR | |
| Descripción | 150mA Micropower CMOS Linear Regulator | |
| Fabricantes | Elite Semiconductor | |
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ESMT/EMP
EMP891X
Fast Ultra High-PSRR, Low-Noise, Low-Dropout,
150mA Micropower CMOS Linear Regulator
General Description
The EMP891X series is a family of CMOS linear regulators,
which include EMP8915 and EMP8916, featuring
ultra-high power supply rejection ratio, low output
voltage noise, low dropout voltage, low quiescent
current and fast transient response. EMP891X
guarantees delivery of 150mA output current, and
supports preset 1.2V, 1.3V, 1.5V, 1.8V, 2.5V, 2.8V, 2.85V
output voltage versions.
Based on its low quiescent current consumption and its
less than 1μA shutdown mode of logical operation, the
EMP891X series are ideal for battery-powered
applications. The ground current increases only slightly
in dropout, further prolonging the battery life.
EMP891X series provide fast turn-on by using dedicated
circuitry to pre-charge an optional external bypass
capacitor. This bypass capacitor is used to reduce the
output voltage noise without adversely affecting the
load transient response. The high power supply rejection
ratio of the EMP891X holds well for low input voltages
typically encountered in battery- operated systems. The
regulator is stable with small ceramic capacitive loads
(2.2µF typical).
Additional features include regulation fault detection,
bandgap voltage reference, constant current limiting
and thermal overload protection. Available in miniature
SOT-25, SOT-26 and TDFN-6 packages, the EMP891X
series are suitable for portable appliances.
EMP products is RoHS compliant.
Features
Miniature SOT-25, SOT-26 and TDFN-6 packages
150mA guaranteed output current
75dB typical PSRR at 1kHz (60dB typical at 10KHz)
30µV RMS output voltage noise (10Hz to 100kHz)
65mV typical dropout at 150mA
106µA typical quiescent current
Less than 1μA typical shutdown mode
Fast line and load transient response
80µs typical fast turn-on time
2.5V to 5.5V input range
Stable with small ceramic output capacitors
Over temperature and over current protection
±2% output voltage tolerance
±1% output voltage tolerance for Vout 1.5V
Applications
Wireless handsets
PCMCIA cards
DSP core power
Hand-held instruments
Battery-powered systems
Portable information appliances
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision : 5.0
1/21
1 page  
ESMT/EMP
Pin Functions
EMP891X
Name
VOUT
VIN
GND
NC
CC
SHDN
FAULT
SOT-25 SOT-26 TDFN-6 Function
5 6 4 Output Voltage Feedback.
Supply Voltage Input. Require a
minimum input capacitor of close to
11 3
1µF to ensure stability and sufficient
decoupling from the ground pin.
2 2 2 Ground Pin.
5 or N/A No Connection
Compensation Capacitor. Connect an
optimum 33nF noise bypass capacitor
44 6
between the CC and the ground pins
to reduce noise in VOUT.
Shutdown Input. Set the regulator into
the disable mode by pulling the SHDN
pin low. To keep the regulator on during
3 3 1 or 5 normal operation, connect the SHDN
pin to VIN. The SHDN pin must not
exceed VIN under all operating
conditions.
Fault Detection Output. The FAULT pin
goes low when the voltage regulating
function fails. Because the FAULT pin
connects to the open-drain output of a
NMOS transistor, a typical 100k Ω
5 N/A or 1
pull-up resistor is required to provide the
necessary output voltage. The FAULT
pin enters the high impedance state
during shutdown and it should be
connected to ground if unused.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision : 5.0
5/21
5 Page 
ESMT/EMP
EMP891X
Typical Performance Characteristics Unless otherwise specified, VIN = VOUT (NOM) + 0.2V, CIN = COUT =
2.2µF, CCC = 33nF, TA = 25°C, V SHDN = VIN. (Continued)
Line Transient
VOUT=2.8V, IOUT=150mA
VOUT=2.8V, IOUT=1mA
3.6
3.6 3.0
3.0
400μs/DIV
Load Transient
VOUT=2.8V, VIN=3V
IOUT, 1mA~150mA
400μs/DIV
Enable Response (VIN=VOUT+0.2V)
IOUT=150mA
400μs/DIV
Load Transient
VOUT=2.8V, VIN=4.2V
IOUT, 1mA~150mA
400μs/DIV
Enable Response (VIN=4.2V)
IOUT=150mA
20μs/DIV
Line Transient
Elite Semiconductor Memory Technology Inc.
20μs/DIV
Publication Date: Mar. 2009
Revision : 5.0
11/21
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet EMP8915-18VF05GRR.PDF ] | |
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