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EMP8965-30VF05GRR 데이터시트 PDF




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부품번호 EMP8965-30VF05GRR 기능
기능 600mA Micropower CMOS Linear Regulator
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EMP8965-30VF05GRR 데이터시트, 핀배열, 회로
ESMT/EMP
EMP8965
Fast Ultra High-PSRR, Low-Noise, Low-Dropout,
600mA Micropower CMOS Linear Regulator
General Description
The EMP8965 low-dropout (LDO) CMOS linear regulators
feature ultra-high power supply rejection ratio (75dB at
1kHz), low output voltage noise (30µV), low dropout
voltage (270mV), low quiescent current (110µA), and fast
transient response. It guarantees delivery of 600mA output
current, and supports preset output voltages ranging from
1.2V to 3.3V with 0.1V increment (except for 1.85V and
2.85V).
The EMP8965 is ideal for battery-powered applications by
virtue of its low quiescent current consumption and its 1nA
shutdown mode of logical operation. The regulator
provides fast turn-on and start-up time by using dedicated
circuitry to pre-charge an optional external bypass
capacitor. This bypass capacitor is used to reduce the
output voltage noise without adversely affecting the load
transient response. The high power supply rejection ratio of
the EMP8965 holds well for low input voltages typically
encountered in battery- operated systems. The regulator is
stable with small ceramic capacitive loads (2.2µF typical).
Additional features include regulation fault detection,
bandgap voltage reference, constant current limiting and
thermal overload protection. Available in miniature 5-pin
SOT-89-5 package options, SOT-23-5 and SOT-23-6
package options are also offered to provide additional
flexibility for different applications.
EMP products is RoHS compliant.
Features
„ Miniature SOT-23-5, SOT-23-6and SOT-89-5 packages
„ 600mA guaranteed output current
„ 75dB typical PSRR at 1kHz
„ 30µV RMS output voltage noise (10Hz to 100kHz)
„ 270mV typical dropout at 600mA
„ 110µA typical quiescent current
„ 1nA typical shutdown mode
„ Fast line and load transient response
„ 80µs typical fast turn-on time
„ 2.5V to 5.5V input range
„ Stable with small ceramic output capacitors
„ Over temperature and over current protection
„ ±2% output voltage tolerance
Applications
„ Wireless handsets
„ PCMCIA cards
„ DSP core power
„ Hand-held instruments
„ Battery-powered systems
„ Portable information appliances
Elite Semiconductor Memory Technology Inc. /Elite MicroPower Inc.
Publication Date : May 2009
Revision : 2.1 1/20




EMP8965-30VF05GRR pdf, 반도체, 판매, 대치품
ESMT/EMP
Typical Application
EMP8965
Fig. 1. EMP8965 with Fault. Fixed output version.
Fig. 2. EMP8965. Fixed output version.
Elite Semiconductor Memory Technology Inc. /Elite MicroPower Inc.
Publication Date : May 2009
Revision : 2.1 4/20

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EMP8965-30VF05GRR 전자부품, 판매, 대치품
ESMT/EMP
V FAULT
I FAULT
TSD
TON
FAULT Detection Voltage VOUT 2.5V, IOUT = 200mA
(SOT-23-6)
(Note 8)
FAULT Output Low
Voltage
ISINK = 2mA
FAULT Off-Leakage
Current
FAULT = 3.6V, SHDN = 0V
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
Start-Up Time
COUT = 10µF, VOUT at 90% of
Final Value
EMP8965
125
0.2 V
0.1 100 nA
165
30
80 µs
Note 1: Absolute Maximum ratings indicate limits beyond which damage may occur. Electrical specifications do not
apply when operating the device outside of its rated operating conditions.
Note 2: All voltages are with respect to the potential at the ground pin.
Note 3: Maximum Power dissipation for the device is calculated using the following equations:
PD
=
TJ(MAX)
θJA
-
TA
where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θJA is the
junction-to-ambient thermal resistance. E.g. for the MSOP-8 packageθJA = 223°C/W, TJ (MAX) = 150°C and
using TA = 25°C, the maximum power dissipation is found to be 561mW. The derating factor (-1/θJA) =
-4.5mW/°C, thus below 25°C the power dissipation figure can be increased by 4.5mW per degree, and similarity
decreased by this factor for temperatures above 25°C.
Note 4: Typical Values represent the most likely parametric norm.
Note 5: Human body model: 1.5kΩ in series with 100pF.
Note 6: Condition does not apply to input voltages below 2.5V since this is the minimum input operating voltage.
Note 7: Dropout voltage is measured by reducing VIN until VOUT drops 100mV from its nominal value at VIN -VOUT = 0.5V.
Dropout voltage does not apply to the regulator versions with VOUT less than 2.5V.
Note 8: The FAULT detection voltage is specified for the input to output voltage differential at which the FAULT pin
goes active low.
Elite Semiconductor Memory Technology Inc. /Elite MicroPower Inc.
Publication Date : May 2009
Revision : 2.1 7/20

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EMP8965-30VF05GRR

600mA Micropower CMOS Linear Regulator

Elite Semiconductor
Elite Semiconductor

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