|
|
|
부품번호 | EMP8965-30VF05GRR 기능 |
|
|
기능 | 600mA Micropower CMOS Linear Regulator | ||
제조업체 | Elite Semiconductor | ||
로고 | |||
ESMT/EMP
EMP8965
Fast Ultra High-PSRR, Low-Noise, Low-Dropout,
600mA Micropower CMOS Linear Regulator
General Description
The EMP8965 low-dropout (LDO) CMOS linear regulators
feature ultra-high power supply rejection ratio (75dB at
1kHz), low output voltage noise (30µV), low dropout
voltage (270mV), low quiescent current (110µA), and fast
transient response. It guarantees delivery of 600mA output
current, and supports preset output voltages ranging from
1.2V to 3.3V with 0.1V increment (except for 1.85V and
2.85V).
The EMP8965 is ideal for battery-powered applications by
virtue of its low quiescent current consumption and its 1nA
shutdown mode of logical operation. The regulator
provides fast turn-on and start-up time by using dedicated
circuitry to pre-charge an optional external bypass
capacitor. This bypass capacitor is used to reduce the
output voltage noise without adversely affecting the load
transient response. The high power supply rejection ratio of
the EMP8965 holds well for low input voltages typically
encountered in battery- operated systems. The regulator is
stable with small ceramic capacitive loads (2.2µF typical).
Additional features include regulation fault detection,
bandgap voltage reference, constant current limiting and
thermal overload protection. Available in miniature 5-pin
SOT-89-5 package options, SOT-23-5 and SOT-23-6
package options are also offered to provide additional
flexibility for different applications.
EMP products is RoHS compliant.
Features
Miniature SOT-23-5, SOT-23-6and SOT-89-5 packages
600mA guaranteed output current
75dB typical PSRR at 1kHz
30µV RMS output voltage noise (10Hz to 100kHz)
270mV typical dropout at 600mA
110µA typical quiescent current
1nA typical shutdown mode
Fast line and load transient response
80µs typical fast turn-on time
2.5V to 5.5V input range
Stable with small ceramic output capacitors
Over temperature and over current protection
±2% output voltage tolerance
Applications
Wireless handsets
PCMCIA cards
DSP core power
Hand-held instruments
Battery-powered systems
Portable information appliances
Elite Semiconductor Memory Technology Inc. /Elite MicroPower Inc.
Publication Date : May 2009
Revision : 2.1 1/20
ESMT/EMP
Typical Application
EMP8965
Fig. 1. EMP8965 with Fault. Fixed output version.
Fig. 2. EMP8965. Fixed output version.
Elite Semiconductor Memory Technology Inc. /Elite MicroPower Inc.
Publication Date : May 2009
Revision : 2.1 4/20
4페이지 ESMT/EMP
V FAULT
I FAULT
TSD
TON
FAULT Detection Voltage VOUT ≥ 2.5V, IOUT = 200mA
(SOT-23-6)
(Note 8)
FAULT Output Low
Voltage
ISINK = 2mA
FAULT Off-Leakage
Current
FAULT = 3.6V, SHDN = 0V
Thermal Shutdown
Temperature
Thermal Shutdown
Hysteresis
Start-Up Time
COUT = 10µF, VOUT at 90% of
Final Value
EMP8965
125
0.2 V
0.1 100 nA
165
℃
30
80 µs
Note 1: Absolute Maximum ratings indicate limits beyond which damage may occur. Electrical specifications do not
apply when operating the device outside of its rated operating conditions.
Note 2: All voltages are with respect to the potential at the ground pin.
Note 3: Maximum Power dissipation for the device is calculated using the following equations:
PD
=
TJ(MAX)
θJA
-
TA
where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θJA is the
junction-to-ambient thermal resistance. E.g. for the MSOP-8 packageθJA = 223°C/W, TJ (MAX) = 150°C and
using TA = 25°C, the maximum power dissipation is found to be 561mW. The derating factor (-1/θJA) =
-4.5mW/°C, thus below 25°C the power dissipation figure can be increased by 4.5mW per degree, and similarity
decreased by this factor for temperatures above 25°C.
Note 4: Typical Values represent the most likely parametric norm.
Note 5: Human body model: 1.5kΩ in series with 100pF.
Note 6: Condition does not apply to input voltages below 2.5V since this is the minimum input operating voltage.
Note 7: Dropout voltage is measured by reducing VIN until VOUT drops 100mV from its nominal value at VIN -VOUT = 0.5V.
Dropout voltage does not apply to the regulator versions with VOUT less than 2.5V.
Note 8: The FAULT detection voltage is specified for the input to output voltage differential at which the FAULT pin
goes active low.
Elite Semiconductor Memory Technology Inc. /Elite MicroPower Inc.
Publication Date : May 2009
Revision : 2.1 7/20
7페이지 | |||
구 성 | 총 20 페이지수 | ||
다운로드 | [ EMP8965-30VF05GRR.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
EMP8965-30VF05GRR | 600mA Micropower CMOS Linear Regulator | Elite Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |