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Número de pieza | MPSA92 | |
Descripción | High voltage Si-epitaxial planar transistors | |
Fabricantes | Diotec | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MPSA92 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! MPSA92 / MPSA94
MPSA92 / MPSA94
PNP
Version 2009-05-07
High voltage Si-epitaxial planar transistors
Hochspannungs-Si-Epitaxial Planar-Transistoren
Power dissipation
Verlustleistung
Plastic case
E B C Kunststoffgehäuse
2 x 2.54
Dimensions / Maße [mm]
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
PNP
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. - Kollektor-Emitter-Spannung
Collector-Base-voltage - Kollektor-Basis-Spannung
Emitter-Base-voltage - Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Base current – Basisstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- VCEO
- VCBO
- VEBO
Ptot
- IC
- IB
Tj
TS
Grenzwerte (TA = 25°C)
MPSA92
MPSA94
300 V
400 V
300 V
400 V
5V
625 mW 1)
300 mA
100 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 200 V
IE = 0, - VCB = 160 V
MPSA92
MPSA94
Emitter-Base cutoff current – Emitterreststrom
IB = 0, - VEB = 3 V
Collector saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 20 mA, - IB = 2 mA
MPSA92
MPSA94
Base saturation voltage – Basis-Sättigungsspannung 2)
- IC = 20 mA, - IB = 2 mA
- ICB0
- ICB0
- IEB0
- VCEsat
- VCEsat
- VBEsat
Kennwerte (Tj = 25°C)
Min. Typ. Max.
250 nA
– – 250 nA
– – 100 nA
500 mV
– – 500 mV
– – 0.9 V
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from the case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MPSA92.PDF ] |
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