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부품번호 | JCS4N65FB-O-F-N-B 기능 |
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기능 | N-CHANNEL MOSFET | ||
제조업체 | JILIN SINO-MICROELECTRONICS | ||
로고 | |||
N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
JCS4N65B
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 4.0 A
VDSS
60V
Rdson(@Vgs=10V) 2. Ω
Qg 13.3nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 9pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 9pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
封装
Package
JCS4N65VB-O-V-N-B
JCS4N65RB-O-R-N-B
JCS4N65CB-O-C-N-B
JCS4N65FB-O-F-N-B
JCS4N65VB
JCS4N65RB
JCS4N65CB
JCS4N65FB
IPAK
DPAK
TO-220C
TO-220MF
无卤素
Halogen
Free
否 NO
否 NO
否 NO
否 NO
包
装
Packaging
条管 Tube
条管 Tube
条管 Tube
条管 Tube
器件重量
Device
Weight
0.35 g(typ)
0.30 g(typ)
2.15 g(typ)
2.20 g(typ)
版本:201011A
1/12
R
电特性 ELECTRICAL CHARACTERISTICS
JCS4N65B
开关特性 Switching Characteristics
延迟时间 Turn-On delay time
上升时间 Turn-On rise time
td(on)
tr
VDD=300V,ID=4A,RG=25Ω
(note 4,5)
- 16 42 ns
- 49 111 ns
延迟时间 Turn-Off delay time
td(off)
- 46 102 ns
下降时间 Turn-Off Fall time
tf
- 37 84 ns
栅极电荷总量 Total Gate Charge
栅-源电荷 Gate-Source charge
栅-漏电荷 Gate-Drain charge
Qg
Qgs
Qgd
VDS =480V ,
ID=4A
VGS =10V (note 4,5)
- 13.3 19
- 3.6 -
- 4.9 -
nC
nC
nC
漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流
Maximum Continuous Drain
-Source Diode Forward Current
IS - - 4 A
正向最大脉冲电流
Maximum Pulsed Drain-Source
Diode Forward Current
ISM - - 16 A
正向压降
Drain-Source Diode Forward VSD VGS=0V, IS=4.0A
Voltage
- - 1.4 V
反向恢复时间
Reverse recovery time
反向恢复电荷
Reverse recovery charge
trr VGS=0V, IS=4.0A
- 330 - ns
Qrr dIF/dt=100A/μs (note 4) - 2.67 - μC
热特性 THERMAL CHARACTERISTIC
最大
项目
符号
Max 单位
Parameter
Symbol JCS4N65VB
Unit
JCS4N65CB JCS4N65FB
/RB
结到管壳的热阻
Thermal Resistance, Junction to Case
Rth(j-c)
2.50
1.25
3.79 ℃/W
结到环境的热阻
Thermal Resistance, Junction to Ambient Rth(j-A)
83
62.5 62.5 ℃/W
注释:
1:脉冲宽度由最高结温限制
2:L=25mH, IAS=4.0A, VDD=50V, RG=25 Ω,起始结
温 TJ=25℃
3:ISD ≤4.0A,di/dt ≤200A/μs,VDD≤BVDSS,起始结温
TJ=25℃
4:脉冲测试:脉冲宽度≤300μs,占空比≤2%
5:基本与工作温度无关
Notes:
1:Pulse width limited by maximum junction
temperature
2 : L=25mH, IAS=4.0A, VDD=50V, RG=25 Ω,Starting
TJ=25℃
3 : ISD ≤4.0A,di/dt ≤200A/μs,VDD≤BVDSS, Starting
TJ=25℃
4:Pulse Test:Pulse Width ≤300μs,Duty Cycle≤2%
5:Essentially independent of operating temperature
版本:201011A
4/12
4페이지 R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
Transient Thermal Response Curve
For JCS4N65(V/R)B
JCS4N65B
Transient Thermal Response Curve
For JCS4N65CB
Transient Thermal Response Curve
For JCS4N65FB
版本:201011A
7/12
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ JCS4N65FB-O-F-N-B.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
JCS4N65FB-O-F-N-B | N-CHANNEL MOSFET | JILIN SINO-MICROELECTRONICS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |