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PDF BSC031N06NS3G Data sheet ( Hoja de datos )
| Número de pieza | BSC031N06NS3G | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSC031N06NS3G (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Type
OptiMOSTM3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
BSC031N06NS3 G
BSC031N06NS3 G
Product Summary
V DS
R DS(on),max
ID
60 V
3.1 mΩ
100 A
Package
PG-TDSON-8
Marking
031N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C2) 100 A
V GS=10 V, T C=100 °C
100
V GS=10 V, T C=25 °C,
R thJA =50K/W3)
22
Pulsed drain current4)
I D,pulse T C=25 °C
400
Avalanche energy, single pulse5) E AS I D=50 A, R GS=25 Ω
298 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=0.9 K/W the chip is able to carry 165A.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4) See figure 3 for more detailed information
5) See figure 13 for more detailed information
Rev.2.3
page 1
2009-10-22
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
200
7V
10 V
6V
160
120
80
40
BSC031N06NS3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
12
5 V 5.5 V
10
5.5 V
5V
8
6
4
2
6V
7V
10 V
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
400
360
320
280
240
200
160
120
80
40
150 °C
25 °C
0
0246
V GS [V]
Rev.2.3
0
3 0 50 100 150
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
200
160
120
80
40
0
80
page 5
50 100 150
I D [A]
200
2009-10-22
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSC031N06NS3G.PDF ] | |
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