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Número de pieza | BSC030P03NS3G | |
Descripción | Power Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BSC030P03NS3G (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOSTM P3 Power-Transistor
Features
• single P-Channel in SuperSO8
• Qualified according JEDEC1) for target applications
• V GS=25 V, specially suited for notebook applications
• Pb-free; RoHS compliant
• ESD > 4 kV
• applications: battery management, load switching
• Halogen-free according to IEC61249-2-21
BSC030P03NS3 G
Product Summary
V DS
R DS(on),max
ID
-30 V
3.0 mΩ
-100 A
PG-TDSON-8
Type
Package
Marking
BSC030P03NS3 G PG-TDSON-8 030P3NS
Lead free
Yes
Halogen free
Yes
Packing
dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current
ID
I D,pulse
T C=25 °C
T C=70 °C
T A=25 °C
T C=25 °C3)
Avalanche energy, single pulse
E AS I D=-100 A, R GS=25 Ω
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
V GS
P tot T C =25 °C
T A=25 °C2)
T j, T stg
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
-100
-100
-25.4
-200
345
±25
125
2.5
-55 ... 150
class 3 (> 4KV)
260 °C
55/150/56
Rev. 2.1
page 1
Unit
A
mJ
V
W
°C
2009-11-16
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
200
-10 V
175
-6.0V
--5.0 V
150
125
100
-4.5 V
75
50
BSC030P03NS3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
6
-4.5V
4
-5.0 V
-6.0 V
-8.0 V
-10 V
2
25
0
012
-V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
200
0
3 0 10 20 30 40 50
-I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
160
140
150 120
100
100 80
150 °C
60
50 40
25 °C
20
Rev. 2.1
0
0123456
-V GS [V]
0
0
page 5
20 40 60 80 100
-I D [A]
2009-11-16
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BSC030P03NS3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
BSC030P03NS3G | Power Transistor | Infineon Technologies AG |
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