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PDF BZV55C27 Data sheet ( Hoja de datos )
| Número de pieza | BZV55C27 | |
| Descripción | SILIICON PLANAR ZENER DIODES | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BZV55C27 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILIICON PLANAR ZENER DIODES
BZV55C 3V6 to 75V
SOD - 80C
Mini MELF (LL-34)
Polarity : Cathode is indicated by a blue band
Hermetically Sealed, Glass Silicon Diodes
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
Average Forward Current (averaged Over any 20 ms period)
Repetitive Peak Forward Current
Total Power Dissipation up to Tflange=50ºC
Up to Ta=50ºC and Mounted on a Ceramic Substrate of 10mm x
10mm x 0.6mm
Non-Repetitive Peak Reverse Power Dissipation t=100µs, Tj=150ºC
Storage Temperature
Junction Temperature
SYMBOL
IF(av)
IFRM
Ptot
Ptot
PZSM
Tstg
Tj
VALUE
250
250
500
400
30
- 65 to +200
200
UNIT
mA
mA
mW
mW
W
ºC
ºC
Thermal Resistance
From Junction to tie-point (flanges)
From Junction to Ambient when Mounted on a Ceramic Substrate
of 10 mm x 10 mm x 0.6 mm
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
Device
Working Voltage* Differential *
Temperature
+/- 5%
Resistance
Coefficient
VZ(V)
@ IZ test=5mA
rdiff(Ω)
@ IZ test=5mA
Sz(mV/K)
@ IZ test=5mA
min max
max
min max
BZV55C 3V6 3.40 3.80 90
-3.5 0
BZV55C 3V9 3.70 4.10 90
-3.5 0
BZV55C 4V3 4.00 4.60 90
-3.5 0
BZV55C 4V7 4.40 5.00 80
-3.5 0.2
BZV55C 5V1 4.80 5.40 60
-2.7 1.2
BZV55C 5V6 5.20 6.00 40
-2.0 2.5
BZV55C 6V2 5.80 6.60 10
0.4 3.7
BZV55C 6V8 6.40 7.20 15
1.2 4.5
BZV55C 7V5 7.00 7.90 15
2.5 5.3
BZV55C 8V2 7.70 8.70 15
3.2 6.2
BZV55C 9V1 8.50 9.60 15
3.8 7.0
BZV55C 10
9.40
10.60
20
4.5 8.0
BZV55C 11 10.40
11.60
20
5.4 9.0
BZV55C 12 11.40
12.70
25
6.0 10.0
BZV55C 13 12.40
14.10
30
7.0 11.0
BZV55C 15 13.80
15.60
30
9.2 13.0
BZV55C3V6_75Rev_1 080402E
Continental Device India Limited
Data Sheet
Rth (j-tp)
Rth (j-a)
0.30 K/mW
0.38 K/mW
VF=0.9V max @ 10mA
Differential
IR @
VR
Resistance
Ta
rdiff (Ω)
25ºC
@ IZ test=1mA
(µA)
(V)
max
max
600 5.0 1.0
600 3.0 1.0
600 3.0 1.0
500 3.0 2.0
480 2.0 2.0
400 1.0 2.0
150 3.0 4.0
80 2.0 4.0
80 1.0 5.0
80 0.7 5.0
100 0.5 6.0
150 0.2 7.0
150 0.1 8.0
150 0.1 8.0
170 0.1 8.0
200 0.05 10.5
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BZV55C27.PDF ] | |
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