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PDF AT25DF321A Data sheet ( Hoja de datos )

Número de pieza AT25DF321A
Descripción 32-Megabit 2.7-volt MinimumSPI Serial Flash Memory
Fabricantes ATMEL Corporation 
Logotipo ATMEL Corporation Logotipo



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Features
Single 2.7V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
– Supports RapidS® Operation
– Supports Dual-Input Program and Dual-Output Read
Very High Operating Frequencies
– 100 MHz for RapidS
– 85 MHz for SPI
– Clock-to-Output (tV) of 5 ns Maximum
Flexible, Optimized Erase Architecture for Code + Data Storage Applications
– Uniform 4-Kbyte Block Erase
– Uniform 32-Kbyte Block Erase
– Uniform 64-Kbyte Block Erase
– Full Chip Erase
Individual Sector Protection with Global Protect/Unprotect Feature
– 64 Sectors of 64-Kbytes Each
Hardware Controlled Locking of Protected Sectors via WP Pin
Sector Lockdown
– Make Any Combination of 64-Kbyte Sectors Permanently Read-Only
128-Byte Programmable OTP Security Register
Flexible Programming
– Byte/Page Program (1 to 256 Bytes)
Fast Program and Erase Times
– 1.0 ms Typical Page Program (256 Bytes) Time
– 50 ms Typical 4-Kbyte Block Erase Time
– 250 ms Typical 32-Kbyte Block Erase Time
– 400 ms Typical 64-Kbyte Block Erase Time
Program and Erase Suspend/Resume
Automatic Checking and Reporting of Erase/Program Failures
Software Controlled Reset
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
– 5 mA Active Read Current (Typical at 20 MHz)
– 5 µA Deep Power-Down Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 8-lead SOIC (208-mil wide)
– 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)
32-Megabit
2.7-volt
Minimum
SPI Serial Flash
Memory
AT25DF321A
Preliminary
1. Description
The AT25DF321A is a serial interface Flash memory device designed for use in a
wide variety of high-volume consumer based applications in which program code is
shadowed from Flash memory into embedded or external RAM for execution. The
flexible erase architecture of the AT25DF321A, with its erase granularity as small as
4-Kbytes, makes it ideal for data storage as well, eliminating the need for additional
data storage EEPROM devices.
3686C–DFLASH–12/08

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AT25DF321A pdf
3. Block Diagram
Figure 3-1. Block Diagram
CS
SCK
SI (SIO)
SO (SOI)
WP
HOLD
INTERFACE
CONTROL
AND
LOGIC
AT25DF321A [Preliminary]
CONTROL AND
PROTECTION LOGIC
Y-DECODER
X-DECODER
I/O BUFFERS
AND LATCHES
SRAM
DATA BUFFER
Y-GATING
FLASH
MEMORY
ARRAY
4. Memory Array
To provide the greatest flexibility, the memory array of the AT25DF321A can be erased in four
levels of granularity including a full chip erase. In addition, the array has been divided into phys-
ical sectors of uniform size, of which each sector can be individually protected from program and
erase operations. The size of the physical sectors is optimized for both code and data storage
applications, allowing both code and data segments to reside in their own isolated regions. The
Memory Architecture Diagram illustrates the breakdown of each erase level as well as the
breakdown of each physical sector.
3686C–DFLASH–12/08
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AT25DF321A arduino
AT25DF321A [Preliminary]
the device will continue reading back at the beginning of the array (000000h). No delays will be
incurred when wrapping around from the end of the array to the beginning of the array.
Deasserting the CS pin will terminate the read operation and put the SO and SIO pins into a
high-impedance state. The CS pin can be deasserted at any time and does not require that a full
byte of data be read.
Figure 7-4. Dual-Output Read Array
CS
SCK
SIO
SO
0 1 2 3 4 5 6 7 8 9 10 11 12
29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
OPCODE
ADDRESS BITS A23-A0
DON'T CARE
OUTPUT
DATA BYTE 1
OUTPUT
DATA BYTE 2
0 0 1 1 1 0 1 1AAAAAA
MSB MSB
A A A X X X X X X X X D6 D4 D2 D0 D6 D4 D2 D0 D6 D4
MSB
HIGH-IMPEDANCE
D7 D5 D3 D1 D7 D5 D3 D1 D7 D5
MSB MSB MSB
3686C–DFLASH–12/08
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