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부품번호 | C650 기능 |
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기능 | high-speed bidirectional protection components | ||
제조업체 | Bourns | ||
로고 | |||
전체 6 페이지수
Features
■ Formerly
brand
■ Extremely high speed performance
■ Blocks high voltages and currents
■ Very high bandwidth; GHz compatible
■ Small package, minimal PCB area
■ Simple, superior circuit protection
■ RoHS compliant*, UL Recognized
The C650 & C850 Series are currently
available, but not recommended for
new designs. Bourns® TBU-CA
Series is preferred.
C650 and C850 Series TBU® High-Speed Protectors
Transient Blocking Units - TBU® Devices
Bourns® C650 and C850 series products are high-speed
bidirectional protection components, constructed using
MOSFET semiconductor technology, designed to protect
against faults caused by short circuits, AC power cross,
induction and lightning surges.
The TBU® high-speed protector, triggering as a function of
the MOSFET, blocks surges and provides an effective barrier
behind which sensitive electronics are not exposed to large
voltages or currents during surge events. The TBU® device is
provided in a surface mount DFN package and meets industry
standard requirements such as RoHS and Pb Free solder
reflow profiles.
Agency Approval
UL recognized component File # E315805.
Industry Standards
Telcordia
ITU-T
Description
GR-1089 Port Type 1, 3, 5
GR-974
K.20, K.20E, K.21, K.21E, K.45
Model
C650
C850
C650
C850
C850
Absolute Maximum Ratings (Tamb = 25 °C)
Symbol Parameter
Vimp
Maximum protection voltage for impulse faults with rise time ≥ 1 µsec
Vrms
Top
Tstg
Maximum protection voltage for continuous Vrms faults
Operating temperature range
Storage temperature range
C650-xxx-WH
C850-xxx-WH
C650-xxx-WH
C850-xxx-WH
Electrical Characteristics (Tamb = 25 °C)
Symbol
Iop
Itrigger
Iout
Rdevice
tblock
Iquiescent
Vreset
Parameter
Maximum current through the device that will not cause
current blocking
Cx50-100-WH
Cx50-180-WH
Cx50-260-WH
Typical current for the device to go from normal operating
state to protected state
Cx50-100-WH
Cx50-180-WH
Cx50-260-WH
Maximum current through the device
Cx50-100-WH
Cx50-180-WH
Cx50-260-WH
Series resistance of the TBU® device
C650-100-WH
C650-180-WH
C650-260-WH
C850-100-WH
C850-180-WH
C850-260-WH
Maximum time for the device to go from normal operating
state to protected state
Current through the triggered TBU® device with 50 Vdc circuit
voltage
Voltage below which the triggered TBU® device will transition to
normal operating state
Min.
C650 and C850 TBU® High-Speed Protectors are bidirectional; specifications are valid in both directions.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Value
650
850
300
425
-40 to +85
-65 to +150
Unit
V
V
°C
°C
Typ.
150
220
330
12
8
8
17
11
11
1
14
Max.
100
180
260
200
360
520
14.5
10
10
19
14
14
1
Unit
mA
mA
mA
Ω
µs
mA
V
C650 and C850 Series TBU® High-Speed Protectors
Product Dimensions
B
A
K
JK
J
C
E
FE
N
3 21
H
PIN 1
TOP VIEW
Recommended Pad Layout
0.70
(.028)
2.625
(.103)
1.15
(.045)
3.55
(.140)
D
SIDE VIEW
BOTTOM VIEW
N
Pad Designation
Pad #
Apply
1 In/Out
2 NC
3 In/Out
NC = Solder to PCB; do not make electrical
connection, do not connect to ground.
Dim.
A
B
C
D
E
F
H
J
K
N
Min.
3.90
(.154)
8.15
(.321)
0.80
(.031)
0.000
(.000)
2.55
(.100)
1.10
(.043)
3.45
(.136)
0.20
(.008)
0.65
(.026)
0.20
(.008)
Typ.
4.00
(.157)
8.25
(.325)
0.85
(.033)
0.025
(.001)
2.60
(.102)
1.15
(.045)
3.50
(.138)
0.25
(.010)
0.70
(.028)
0.25
(.010)
Max.
4.10
(.161)
8.35
(.329)
0.90
(.035)
0.050
(.002)
2.65
(.104)
1.20
(.047)
3.55
(.140)
0.30
(.012)
0.75
(.030)
0.30
(.012)
DIMENSIONS:
MM
(INCHES)
TBU® protectors have matte-tin termination finish. Suggested layout should use non-solder mask define (NSMD). Recommended stencil thick-
ness is 0.10-0.12 mm (.004-.005 in.) with stencil opening size 0.025 mm (.0010 in.) less than the device pad size. As when heat sinking any
power device, it is recommended that, wherever possible, extra PCB copper area is allowed. For minimum parasitic capacitance, do not allow
any signal, ground or power signals beneath any of the pads of the device.
Thermal Resistances
Symbol
Rth(j-a)
Parameter
Junction to leads (package)
Value
116
Unit
°C/W
Reflow Profile
Profile Feature
Average Ramp-Up Rate (Tsmax to Tp)
Preheat
- Temperature Min. (Tsmin)
- Temperature Max. (Tsmax)
- Time (tsmin to tsmax)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5 °C of Actual Peak Temp. (tp)
Ramp-Down Rate
Time 25 °C to Peak Temperature
Pb-Free Assembly
3 °C/sec. max.
150 °C
200 °C
60-180 sec.
217 °C
60-150 sec.
260 °C
20-40 sec.
6 °C/sec. max.
8 min. max.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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다운로드 | [ C650.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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