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PDF TSM2301A Data sheet ( Hoja de datos )
| Número de pieza | TSM2301A | |
| Descripción | 20V P-Channel MOSFET | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
TSM2301A
20V P-Channel MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
130 @ VGS =-4.5V
-20
190 @ VGS =-2.5V
ID (A)
-2.8
-2.0
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Battery Management
● High Speed Switch
Ordering Information
Part No.
Package
Packing
TSM2301ACX RFG SOT-23
3Kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
Block Diagram
P-Channel MOSFET
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation
TA=25oC
TA=70oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ
TJ, TSTG
Thermal Performance
Parameter
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on a 1 in2 pad of 2oz Cu, t ≤ 10 sec.
Symbol
RӨJA
Limit
-20
±12
-2.8
-10
-1
0.7
0.45
+150
-55 to +150
Limit
175
Unit
V
V
A
A
A
W
oC
oC
Unit
oC/W
1/6 Version: A12
1 page  
TSM2301A
20V P-Channel MOSFET
SOT-23 Mechanical Drawing
SOT-23 DIMENSION
DIM
MILLIMETERS
MIN MAX
INCHES
MIN MAX.
A 0.95 BSC
0.037 BSC
A1 1.9 BSC
0.074 BSC
B 2.60 3.00 0.102 0.118
C 1.40 1.70 0.055 0.067
D 2.80 3.10 0.110 0.122
E 1.00 1.30 0.039 0.051
F 0.00 0.10 0.000 0.004
G 0.35 0.50 0.014 0.020
H 0.10 0.20 0.004 0.008
I
0.30
0.60 0.012 0.024
J 5º 10º 5º 10º
5/6 Version: A12
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSM2301A.PDF ] | |
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