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PDF TSM2611ED Data sheet ( Hoja de datos )

Número de pieza TSM2611ED
Descripción 20V Dual N-Channel MOSFET
Fabricantes Taiwan Semiconductor 
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No Preview Available ! TSM2611ED Hoja de datos, Descripción, Manual

TSM2611ED
20V Dual N-Channel MOSFET w/ESD Protected
SOT-26
Pin Definition:
1. Source 1 6. Gate 1
2. Drain 1 5. Drain 2
3. Source 2 4. Gate 2
PRODUCT SUMMARY
VDS (V)
RDS(on)(m)
20 @ VGS = 4.5V
20
28 @ VGS = 2.5V
Features
Advance Trench Process Technology
High Density Cell Design for Ultra Low On resistance
ESD Protected HBM 2KV
Block Diagram
Application
Portable Applications
Battery Management
Ordering Information
Part No.
Package Packing
TSM2611EDCX6 RFG SOT-26 3Kpcs / 7” Reel
`
Note: “G” denotes Halogen Free Product.
Dual N-Channel MOSFET
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipation
TA=25oC
TA=100oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ
TJ, TSTG
20
±10
6
22
1
0.83
0.3
+150
-55 to +150
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on a 1 in2 pad, t 10 sec.
Symbol
RӨJC
RӨJA
Limit
80
150
ID (A)
6
5
Unit
V
V
A
A
A
W
oC
oC
Unit
oC/W
oC/W
1/6 Version: A11

1 page




TSM2611ED pdf
TSM2611ED
20V Dual N-Channel MOSFET w/ESD Protected
SOT-26 Mechanical Drawing
SOT-26 DIMENSION
MILLIMETERS
DIM MIN TYP MAX
INCHES
MIN TYP MAX
A 0.95 BSC
0.0374 BSC
A1 1.9 BSC
0.0748 BSC
B 2.60 2.80 3.00 0.1024 0.1102 0.1181
C 1.40 1.50 1.70 0.0551 0.0591 0.0669
D 2.80 2.90 3.10 0.1101 0.1142 0.1220
E 1.00 1.10 1.20 0.0394 0.0433 0.0472
F 0.00 -- 0.10 0.00
0.0039
G 0.35 0.40 0.50 0.0138 0.0157 0.0197
H 0.10 0.15 0.20 0.0039 0.0059 0.0079
I 0.30 -- 0.60 0.0118 -- 0.0236
J 5º -- 10º 5º
-- 10º
5/6 Version: A11

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