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PDF TSSA3U45 Data sheet ( Hoja de datos )
| Número de pieza | TSSA3U45 | |
| Descripción | Trench MOS Barrier Schottky Rectifier | |
| Fabricantes | Taiwan Semiconductor | |
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TSSA3U45
Taiwan Semiconductor
Trench MOS Barrier Schottky Rectifier
FEATURES
- Patented Trench MOS Barrier Schottky technology
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AC(SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test.
Polarity: Indicated by cathode band
DO-214AC(SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
TSSA3U45
Marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
VRRM
IF(AV)
IFSM
3U45
45
3
50
Min. TYP.
Maximum instantaneous forward voltage
per diode (Note 1)
IF = 3A
TJ = 25°C
TJ = 125°C
VF
VF
-
-
0.42
0.30
Maximum instantaneous reverse current per
diode at rated reverse voltage
Maximum DC reverse voltage
Typical thermal resistance per diode
Operating temperature range
TJ = 25°C
TJ = 125°C
IR
VDC
Rθjc
TJ
--
- 50
32
20
- 55 to + 150
Storage temperature range
Note1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle
TSTG
- 55 to + 150
MAX.
0.48
0.40
500
100
UNIT
V
A
A
V
μA
mA
V
OC/W
OC
OC
Document Number: DS_D1401011
Version: B14
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TSSA3U45.PDF ] | |
Hoja de datos destacado
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