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PDF AUIRLR120N Data sheet ( Hoja de datos )
| Número de pieza | AUIRLR120N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 97624
AUIRLR120N
• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175ºC Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*
G
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) max.
S ID
100V
0.185Ω
10A
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
G
Gate
D
S
G
D-Pak
AUIRLR120N
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
10
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
7.0 A
35
PD @TC = 25°C Power Dissipation
Linear Derating Factor
48
0.32
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
ÃAvalanche Current
Repetitive Avalanche Energy
ePeak Diode Recovery
± 16
V
85 mJ
6.0 A
4.8 mJ
5.0 V/ns
TJ Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
300
°C
Parameter
gRθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB mount) **
RθJA Junction-to-Ambient
Typ.
–––
–––
–––
Max.
3.1
50
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
01/19/11
1 page  
AUIRLR120N
800
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
600 Ciss
400
Coss
200 Crss
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
15 ID = 6.0A
12
9
VDS = 80V
VDS = 50V
VDS = 20V
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 5 10 15 20 25
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10 TJ = 175°C
TJ = 25°C
1
0.1
0.4
VGS = 0V A
0.6 0.8 1.0 1.2 1.4
VSD , Source-to-Drain Voltage (V)
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10µs
10
100µs
1ms
1
10ms
STTCJing==le
25°C
175°C
Pulse
0.1
1 10 100
VDS , Drain-to-Source Voltage (V)
A
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
5 Page 
AUIRLR120N
Ordering Information
Base part
number
AUIRLR120N
Package Type Standard Pack
Dpak
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
75
2000
3000
3000
AUIRLR120N
AUIRLR120NTR
AUIRLR120NTRL
AUIRLR120NTRR
www.irf.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRLR120N.PDF ] | |
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