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PDF SW226N Data sheet ( Hoja de datos )
| Número de pieza | SW226N | |
| Descripción | N-channel MOSFET | |
| Fabricantes | SAMWIN | |
| Logotipo |  |
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SAMWIN
SW226N
Features
■ High ruggedness
■ RDS(ON) (Max 2.3 Ω)@VGS=10V
■ Gate Charge (Typical 30nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-251
TO-252
12
3
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
N-channel MOSFET
BVDSS : 600V
ID : 4.0A
RDS(ON) : 2.3ohm
2
1
3
Order Codes
Item
1
2
Sales Type
SW I 226N
SW D 226N
Marking
SW226N
SW226N
Package
TO-251
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
PD
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
TSTG, TJ Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
TL purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
Value
600
4.0*
2.2*
16
±30
310
20.4
4.5
TO-251
TO-252
60 60
0.47 0.47
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
TO-251
TO-252
2.1 2.1
100
Unit
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2012. Rev. 3.0
1/5
1 page  
SAMWIN
Fig. 11. Unclamped Inductive switching test circuit & waveform
SW226N
Fig. 12. Peak diode recovery dv/dt test circuit & waveform
DUT + VDS
VGS (DRIVER)
10VGS
-
IS
L
VDS
RG
Same type
as DUT
*. dv/dt controlled by RG
*. Is controlled by pulse period
IS (DUT)
VDD
VDS (DUT)
10V
di/dt
IRM
Diode reverse current
Diode recovery dv/dt
VF VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2012. Rev. 3.0
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SW226N.PDF ] | |
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