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PDF PXT8050 Data sheet ( Hoja de datos )
| Número de pieza | PXT8050 | |
| Descripción | Plastic-Encapsulate Transistors | |
| Fabricantes | TY Semiconductor | |
| Logotipo |  |
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Product specification
SOT-89-3L Plastic-Encapsulate Transistors
PXT8050 TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z Compliment to PXT8550
MARKING: Y1
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1. BASE
2. COLLECTOR
3. EMITTER
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
40 V
VCEO
Collector-Emitter Voltage
25 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous 1.5 A
PC Collector Power dissipation
0.5 W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55~150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100uA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=0.1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
Collector cut-off current
ICBO
VCB=40V, IE=0
Emitter cut-off current
ICEO
VCE=20V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=1V, IC=100mA
VCE=1V, IC=800mA
Collector-emitter saturation voltage
VCE(sat) IC=800mA, IB=80mA
Base-emitter saturation voltage
VBE(sat) IC=800mA, IB=80mA
Base-emitter voltage
VBE VCE=1V, IC=10mA
Base-emitter positive favor voltage
VBEF
IB=1A
Transition frequency
fT VCE=10V,IC=50mA,f=30MHz
output capacitance
Cob VCB=10V,IE=0,f=1MHz
CLASSIFICATION OF hFE(1)
Rank B C D
Range
85-160
120-200
160-300
Min
40
25
5
85
40
100
Typ Max Unit
V
V
V
0.1 μA
0.1 μA
0.1 μA
400
0.5 V
1.2 V
1V
1.55 V
MHz
15 pF
D3
300-400
http://www.twtysemi.com
4008-318-123
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| PDF Descargar | [ Datasheet PXT8050.PDF ] | |
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