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PDF PXT8550 Data sheet ( Hoja de datos )
| Número de pieza | PXT8550 | |
| Descripción | Plastic-Encapsulate Transistors | |
| Fabricantes | TY Semiconductor | |
| Logotipo |  |
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Product specification
SOT-89-3L Plastic-Encapsulate Transistors
PXT8550 TRANSISTOR (PNP)
SOT-89-3L
FEATURES
Compliment to PXT8050
1. BASE
2. COLLECTOR
MARKING: Y2
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
3. EMITTER
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-25
-5
-1.5
0.5
150
-55~150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Base-emitter positive favor voltage
Transition frequency
output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE(on)
VBEF
fT
Cob
Test conditions
IC= -100μA, IE=0
IC= -0.1mA, IB=0
IE= -100μA, IC=0
VCB= -40 V,IE=0
VCE= -20V, IB=0
VEB= -5V, IC=0
VCE= -1V, IC= -100mA
VCE= -1V, IC= -800mA
IC=-800mA, IB= -80mA
IC=-800mA, IB= -80mA
Ic=-1V,VCE=-10mA
IB=-1A
VCE= -10V, IC= -50mA
VCB=-10V,IE=0,f=1MHz
Min
-40
-25
-5
85
40
100
Max
-0.1
-0.1
-0.1
400
-0.5
-1.2
-1
-1.55
20
Unit
V
V
V
μA
μA
μA
V
V
V
V
MHz
pF
CLASSIFICATION OF hFE(1)
Rank
B
Range
85-160
C
120-200
D
160-300
D3
300-400
http://www.twtysemi.com
4008-318-123
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