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PDF SGW30N60 Data sheet ( Hoja de datos )
| Número de pieza | SGW30N60 | |
| Descripción | Fast IGBT | |
| Fabricantes | Infineon | |
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SGP30N60
SGW30N60
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
PG-TO-220-3-1
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
SGP30N60
SGW30N60
VCE IC VCE(sat) Tj Marking Package
600V 30A
2.5V
150°C G30N60 PG-TO-220-3-1
600V 30A
2.5V
150°C G30N60 PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 30 A, VCC = 50 V, RGE = 25 Ω ,
start at Tj = 25°C
Short circuit withstand time2
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Ts
Value
600
41
30
112
112
±20
165
Unit
V
A
V
mJ
10
250
-55...+150
260
µs
W
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.5 Nov. 09
1 page  
SGP30N60
SGW30N60
90A
80A
70A
60A VGE=20V
15V
50A 13V
40A
11V
9V
30A
7V
5V
20A
10A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
90A
80A
70A
60A VGE=20V
15V
50A 13V
40A
11V
9V
30A
7V
5V
20A
10A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
100A
90A Tj=+25°C
80A -55°C
+150°C
70A
60A
50A
40A
30A
20A
10A
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
4.0V
3.5V
IC = 60A
3.0V
2.5V IC = 30A
2.0V
1.5V
1.0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5 Rev. 2.5 Nov. 09
5 Page 
SGP30N60
SGW30N60
τr11
Tj (t)
p(t) r1
τ2
r2
r2
τrnn
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
a nd Stray capacity Cσ =900pF.
11 Rev. 2.5 Nov. 09
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SGW30N60.PDF ] | |
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