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PDF SGW30N60 Data sheet ( Hoja de datos )

Número de pieza SGW30N60
Descripción Fast S-IGBT
Fabricantes Siemens　
Logotipo Siemens Logotipo



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No Preview Available ! SGW30N60 Hoja de datos, Descripción, Manual

Preliminary data
SGP30N60, SGB30N60, SGW30N60
Fast S-IGBT in NPT-Technology
• 75 % lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time 10 µs
• Designed for moderate and high frequency applications:
- SMPS and PFC up to 150 kHz
- Inverter, Motor controls
• NPT-Technology for 600V applications offers:
- tighter parameter distribution
- higher ruggedness, temperature stable behaviour
- parallel switching capability
Type
SGP30N60
SGB30N60
SGW30N60
VCE
600 V
IC
30 A
VCE(sat) Tj Package
2.5 V 150 °C TO-220AB
TO-263AB
TO-247AC
Ordering Code
Q67041-A4713-A2
Q67041-A4713-A3
Q67040-S4237
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25 °C
TC = 100 °C
VCE
IC
Pulsed collector current, tp limited by Tjmax
Gate-emitter voltage
Avalanche energy, single pulse
IC = 30 A, VCC = 50 V, RGE = 25 Ω,
start at Tj = 25 °C
ICpuls
VGE
EAS
Short circuit withstand time 1)
VGE = 15 V, VCC = 600 V, Tj ≤ 150 °C
Power dissipation
TC = 25 °C
tsc
Ptot
Operating junction and storage temperature
Tj , Tstg
Soldering temperature, 1.6mm from case for 10s -
Value
600
41
30
112
±20
165
10
250
-55...+150
260
Unit
V
A
V
mJ
µs
W
°C
1) allowed number of short circuits: <1000; time between short circuits: >1s
Semiconductor Group
1
02 / 1999

1 page




SGW30N60 pdf
Preliminary data
SGP30N60, SGB30N60, SGW30N60
Switching Characteristics, Inductive Load (Diode: BUP603D), at Tj = 150 °C
Parameter
Symbol
Values
min. typ. max.
Characteristics
Turn-on delay time
VCC = 400 V, VGE = 15 V, IC = 30 A,
RGon = 11 Ω
Rise time
VCC = 400 V, VGE = 15 V, IC = 30 A,
RGon = 11 Ω
td(on)
- 30 36
tr - 46 55
Turn-off delay time
VCC = 400 V, VGE = 0 V, IC = 30 A,
RGoff = 11 Ω
Fall time
VCC = 400 V, VGE = 0 V, IC = 30 A,
RGoff = 11 Ω
td(off)
- 324 389
tf - 67 80
Turn-on energy 1)
VCC = 400 V, VGE = 15 V, IC = 30 A,
RGon = 11 Ω
Eon - 1.81 2.08
Turn-off energy
VCC = 400 V, VGE = 0 V, IC = 30 A,
RGoff = 11 Ω
Eoff - 0.92 1.2
Total switching energy 1)
VCC = 400 V, VGE = 0/+15 V, IC = 30 A,
RG = 11 Ω
Ets - 2.73 3.28
Unit
ns
mJ
1) Eon and Ets include BUP603D diode commutation losses.
Semiconductor Group
5
02 / 1999

5 Page





SGW30N60 arduino
Semiconductor Group
SGP30N60, SGB30N60, SGW30N60
TO-220AB
symbol
A
B
C
D
E
F
G
H
K
L
M
N
P
T
dimensions
[mm]
min max
9.70 10.30
14.88
15.95
0.65 0.86
3.55 3.89
2.60 3.00
6.00 6.80
13.00
14.00
4.35 4.75
0.38 0.65
0.95 1.32
2.54 typ.
4.30 4.50
1.17 1.40
2.30 2.72
TO-263AB
symbol
A
B
C
D
E
F
G
H
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
Z
dimensions
[mm]
min max
9.80 10.20
0.70 1.30
1.00 1.60
1.03 1.07
2.54 typ.
0.65 0.85
5.08 typ.
4.30 4.50
1.17 1.37
9.05 9.45
2.30 2.50
15 typ.
0.00 0.20
4.20 5.20
8° max
2.40 3.00
0.40 0.60
10.80
1.15
6.23
4.60
9.40
16.15
11 02 / 1999

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